Projects funded by the NCN

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59 projects found matching your search criteria :

  1. Strain-relaxed superlattices on porous GaN for high-performance and superior wavelength stability red microLEDs.

    Call: OPUS 29 , Panel: ST7

    Principal investigator: dr Grzegorz Tomasz Staszczak

    Instytut Wysokich Ciśnień PAN

  2. GNOMES – GaN Nanowires with Oxide shells: Modification and Enhancement by Surface engineering

    Call: PRELUDIUM 24 , Panel: ST11

    Principal investigator: Radosław Szymon

    Politechnika Wrocławska

  3. Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications

    Call: SONATINA 9 , Panel: ST5

    Principal investigator: dr Artur Paweł Lachowski

    Instytut Wysokich Ciśnień PAN

  4. Surface functionalization of p-(Al)GaN with MXenes – contact engineering for efficient deep UV emitters

    Call: SONATINA 9 , Panel: ST11

    Principal investigator: dr Dominika Marianna Majchrzak

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  5. Interdisciplinary investigations towards integration of active and passive sub-THz elements into a single monolithic cir...

    Call: OPUS 28 , Panel: ST7

    Principal investigator: dr hab. Grzegorz Cywiński

    Instytut Wysokich Ciśnień PAN

  6. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

    Call: OPUS 25 , Panel: ST5

    Principal investigator: prof. Michał Stanisław Boćkowski

    Instytut Wysokich Ciśnień PAN

  7. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

    Call: PRELUDIUM 21 , Panel: ST5

    Principal investigator: Wojciech Tomasz Olszewski

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  8. Spectroscopic investigation of electronic phenomena at the lead-free perovskite/GaN interface

    Call: PRELUDIUM 21 , Panel: ST3

    Principal investigator: Ewelina Anna Zdanowicz

    Politechnika Wrocławska

  9. Physics of GaN/AlGaN nanowire surfaces – towards more efficient nano-LEDs

    Call: OPUS 23 , Panel: ST5

    Principal investigator: prof. Bogdan Jerzy Kowalski

    Instytut Fizyki PAN

  10. Hybrid photovoltaic detectors based on the van der Waals/(Al)GaN junction

    Call: OPUS 23 , Panel: ST7

    Principal investigator: prof. Robert Henryk Kudrawiec

    Politechnika Wrocławska

  11. Seizing the advantages of Nitrogen-polar GaN for III-nitride light emitters

    Call: SONATA 17 , Panel: ST3

    Principal investigator: dr hab. Henryk Maciej Turski

    Instytut Wysokich Ciśnień PAN

  12. Efficient UV light emitters and detectors based on GaN/AlGaN nanowire arrays with buried mirror and bottom metallic elec...

    Call: SONATA 17 , Panel: ST7

    Principal investigator: dr Marta Maria Sobańska

    Instytut Fizyki PAN

  13. Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

    Call: PRELUDIUM 20 , Panel: ST5

    Principal investigator: Karolina Grabiańska

    Instytut Wysokich Ciśnień PAN

  14. Thin films of transition metal dichalcogenides. The influence of the substrate on the MoTe2 structure, morphology and ma...

    Call: PRELUDIUM 20 , Panel: ST5

    Principal investigator: Zuzanna Wiktoria Ogorzałek-Sory

    Uniwersytet Warszawski, Wydział Fizyki

  15. Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu...

    Call: OPUS 21 , Panel: ST7

    Principal investigator: dr Grzegorz Tomasz Staszczak

    Instytut Wysokich Ciśnień PAN

  16. Metal vacancies, their complexes and clusters in nitride semiconductors.

    Call: WEAVE-UNISONO , Panel: ST5

    Principal investigator: dr Robert Filip Czernecki

    Instytut Wysokich Ciśnień PAN

  17. The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

    Call: SONATA 16 , Panel: ST5

    Principal investigator: dr Tomasz Sochacki

    Instytut Wysokich Ciśnień PAN

  18. Deep generative models for 3D representations

    Call: OPUS 19 , Panel: ST6

    Principal investigator: dr Maciej Mateusz Zięba

    Politechnika Wrocławska

  19. Radiative and non-radiative carbon and vacancy-related defects in GaN.

    Call: OPUS 19 , Panel: ST5

    Principal investigator: dr Piotr Kruszewski

    Instytut Wysokich Ciśnień PAN

  20. As-induced VLS-MBE growth of dodecagonal GaN microrods

    Call: PRELUDIUM 19 , Panel: ST5

    Principal investigator: Paulina Ada Ciechanowicz

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  21. Nanoporous GaN - a new platform for realization of quantum structures

    Call: SONATA 15 , Panel: ST5

    Principal investigator: dr Marta Łucja Sawicka

    Instytut Wysokich Ciśnień PAN

  22. Terahertz plasma resonance in the grating-gate and fin-shaped channel AlGaN/GaN structures

    Call: PRELUDIUM 18 , Panel: ST7

    Principal investigator: Pavlo Sai

    Instytut Wysokich Ciśnień PAN

  23. Impurity 3D diffusion in GaN - mechanism and the role of defects

    Call: OPUS 17 , Panel: ST5

    Principal investigator: prof. Andrzej Wiesław Turos

    Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

  24. Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high...

    Call: PRELUDIUM 16 , Panel: ST7

    Principal investigator: Monika Masłyk

    Instytut Wysokich Ciśnień PAN

  25. Mechanisms of Schottky barrier formation and phenomena occuring at high temperatures in GaN-on-Si epitaxial structures w...

    Call: SONATA 14 , Panel: ST7

    Principal investigator: dr Marek Wzorek

    Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

  26. In situ Characterization of MOVPE Growth Dynamics and of Diffusion Mechanisms in Nitrides and Their Influence on Optoele...

    Call: BEETHOVEN 3 , Panel: ST5

    Principal investigator: prof. Michał Jerzy Leszczyński

    Instytut Wysokich Ciśnień PAN

  27. Tracking ALICE - Fast Simulation based on Machine Learning Methods for the ALICE CERN

    Call: PRELUDIUM 16 , Panel: ST6

    Principal investigator: Kamil Rafał Deja

    Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

  28. Transparent electrical contacts for III-N structures based on van der Waals crystals

    Call: OPUS 15 , Panel: ST7

    Principal investigator: prof. Robert Henryk Kudrawiec

    Politechnika Wrocławska

  29. Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

    Call: OPUS 15 , Panel: ST5

    Principal investigator: dr hab. Michał Stanisław Boćkowski

    Instytut Wysokich Ciśnień PAN

  30. Terahertz Plasma Wave Instabilities in GaN/AlGaN Nanowires

    Call: DAINA 1 , Panel: ST7

    Principal investigator: dr Maciej Sakowicz

    Instytut Wysokich Ciśnień PAN

  31. Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

    Call: OPUS 12 , Panel: ST5

    Principal investigator: dr hab. Izabella Alicja Grzegory

    Instytut Wysokich Ciśnień PAN

  32. GaN nanowires for new architecture of optoelectronic devices and sensors.

    Call: OPUS 12 , Panel: ST7

    Principal investigator: prof. Zbigniew Ryszard Żytkiewicz

    Instytut Fizyki PAN

  33. Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structure...

    Call: SONATA BIS 6 , Panel: ST7

    Principal investigator: dr hab. Grzegorz Cywiński

    Instytut Wysokich Ciśnień PAN

  34. Tunnel-junctions and highly resistive layers in GaN-based heterostructures

    Call: OPUS 11 , Panel: ST7

    Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

    Politechnika Wrocławska

  35. Application of electron diffraction RHEED and mass spectroscopy QMS for in-situ analysis of nucleation and MBE growth of...

    Call: PRELUDIUM 11 , Panel: ST3

    Principal investigator: dr Marta Maria Sobańska

    Instytut Fizyki PAN

  36. Nanoengineering of functionalized Au/GaN surface: Dynamics of labile intermolecular interactions on the interface.

    Call: PRELUDIUM 10 , Panel: ST8

    Principal investigator: Igor Stanisław Dzięcielewski

    Instytut Wysokich Ciśnień PAN

  37. Elaboration of manufacturing technology of SERS platforms on functionalized by etching GaN substrates as sensors for exa...

    Call: OPUS 10 , Panel: ST8

    Principal investigator: dr hab. Jan Weyher

    Instytut Wysokich Ciśnień PAN

  38. The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/Ga...

    Call: SONATA 10 , Panel: ST7

    Principal investigator: dr Karolina Pągowska

    Instytut Technologii Elektronowej

  39. Ferromagnetic stability of spin interaction between local magnetic centers in GaN, BN, SiC and ZnO: GGA+U studies with t...

    Call: SONATA 9 , Panel: ST3

    Principal investigator: dr Oksana Volnianska

    Instytut Fizyki PAN

  40. New method of fabrication of InGaN/GaN quantum wires

    Call: OPUS 9 , Panel: ST5

    Principal investigator: prof. Michał Jerzy Leszczyński

    Instytut Wysokich Ciśnień PAN

  41. Modulation spectroscopy of novel nitride semiconductor structures in ultraviolet spectral range

    Call: SONATA 9 , Panel: ST7

    Principal investigator: dr Magdalena Violetta Latkowska-Baranowska

    Politechnika Wrocławska

  42. From nitride micro-LEDs to single photon emitters. Top-down approach.

    Call: OPUS 9 , Panel: ST7

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  43. GaN- and GaAs-based monolithic Vertical-Cavity Surface-Emitting Lasers

    Call: OPUS 8 , Panel: ST7

    Principal investigator: dr hab. Tomasz Czyszanowski

    Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

  44. Relationships between band structure and mechanism of light emission in superstructures In(Ga)N/GaN layers with variable...

    Call: SONATA 8 , Panel: ST3

    Principal investigator: dr Grzegorz Tomasz Staszczak

    Instytut Wysokich Ciśnień PAN

  45. GaN nanostructures genereted in selective ICP etching process, initied by titanium thin film

    Call: PRELUDIUM 6 , Panel: ST7

    Principal investigator: Marek Ekielski

    Instytut Technologii Elektronowej

  46. Properties of InGaN waveguides and a model of leakage of optical modes to GaN substrate in laser diodes

    Call: PRELUDIUM 6 , Panel: ST7

    Principal investigator: Grzegorz Muzioł

    Instytut Wysokich Ciśnień PAN

  47. Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec...

    Call: OPUS 6 , Panel: ST3

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  48. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing ...

    Call: OPUS 5 , Panel: ST5

    Principal investigator: prof. Jerzy Franciszek Janik

    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

  49. Study of V -group acceptor dopants and their mutual influence on each other in Zn(Mg)O/GaN hetrostructures

    Call: SONATA 5 , Panel: ST3

    Principal investigator: dr Ewa Przeździecka

    Instytut Fizyki PAN

  50. Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in meta...

    Call: PRELUDIUM 4 , Panel: ST7

    Principal investigator: Maciej Franciszek Matys

    Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne

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