Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Nanoporous GaN - a new platform for realization of quantum structures

2019/35/D/ST5/02950

Keywords:

gallium nitride molecular beam epitaxy electrochemical etching nanoporous GaN ion implantation doping n-type p-type excitons phonons quantum wells

Descriptors:

  • ST5_12: Methods of nanomaterials/materials synthesis
  • ST3_5: Physical properties of semiconductors and insulators
  • ST5_6: Porous materials, ceramics, glasses

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj.

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Marta Łucja Sawicka 

Number of co-investigators in the project: 3

Call: SONATA 15 - announced on 2019-09-16

Amount awarded: 1 128 960 PLN

Project start date (Y-m-d): 2020-10-02

Project end date (Y-m-d): 2024-10-01

Project duration:: 48 months (the same as in the proposal)

Project status: Project completed

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (19)
  1. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content InGaN/InGaN Quantum Wells
    Authors:
    P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Żmuda, S. Grzanka, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 19, strony: 14044), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.19.014044 - link to the publication
  2. Fabrication of GaN-air channels for embedded photonic structures
    Authors:
    M. Sawicka, O. Gołyga, N. Fiuczek, G. Muzioł, A. Feduniewicz-Żmuda, M. Siekacz, H. Turski, R. Czernecki, E. Grzanka, I. Prozheev, F. Tuomisto, and C. Skierbiszewski
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2023, tom: 155, strony: 107234), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mssp.2022.107234 - link to the publication
  3. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    Marcin Siekacz, Grzegorz Muziol, Henryk Turski, Mateusz Hajdel, Mikolaj Żak, Mikolaj Chlipała, Marta Sawicka, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Julita Smalc-Koziorowska, Szymon Stańczyk and Czeslaw Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481, 1-11), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  4. Fabrication of GaN-air channels for embedded photonic structures
    Authors:
    M. Sawicka, O. Gołyga, N. Fiuczek, G. Muzioł, A. Feduniewicz-Żmuda, M. Siekacz, H. Turski, R. Czernecki, E. Grzanka, I. Prozheev, F. Tuomisto, and C. Skierbiszewski
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2023, tom: 155, strony: 107234), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mssp.2022.107234 - link to the publication
  5. Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection
    Authors:
    Natalia Fiuczek, Marta Sawicka, Anna Feduniewicz-Żmuda, Marcin Siekacz, Mikołaj Żak, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muzioł, Paweł Wolny, John J. Kelly, Czesław Skierbiszewski
    Academic press:
    Acta Materialia (rok: 2022, tom: 234, strony: 118018), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.actamat.2022.118018 - link to the publication
  6. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    Marcin Siekacz, Grzegorz Muziol, Henryk Turski, Mateusz Hajdel, Mikolaj Żak, Mikolaj Chlipała, Marta Sawicka, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Julita Smalc-Koziorowska, Szymon Stańczyk and Czeslaw Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481, 1-11), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  7. Nanostars in Highly Si-Doped GaN
    Authors:
    M. Sawicka, H. Turski, K. Sobczak, A. Feduniewicz-Żmuda, N. Fiuczek, O. Gołyga, M. Siekacz, G. Muziol, G. Nowak, J. Smalc-Koziorowska and C. Skierbiszewski
    Academic press:
    Crystal Growth & Design (rok: 2023, tom: 23, strony: 5093-5101), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acs.cgd.3c00317 - link to the publication
  8. Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
    Authors:
    N. Fiuczek, M. Hajdel, A. Kafar, G.Muziol, M. Siekacz, A. Feduniewicz-Żmuda, O. Gołyga, C. Skierbiszewski and M. Sawicka
    Academic press:
    Optical Materials Express (rok: 2023, tom: 5, strony: 1201-1210), Wydawca: Optica Publishing Group
    Status:
    Published
    DOI:
    10.1364/OME.485588 - link to the publication
  9. Composition Inhomogeneity in Nonpolar (101 ̅ 0) and Semipolar (202 ̅ 1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
    Authors:
    Marta Sawicka, Julita Smalc-Koziorowska, Marcin Kryśko, Natalia Fiuczek, Paweł Wolny, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Crystal Growth & Design (rok: 2021, tom: 21, 9, strony: 5223-5230), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acs.cgd.1c00560 - link to the publication
  10. Composition Inhomogeneity in Nonpolar (101 ̅ 0) and Semipolar (202 ̅ 1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
    Authors:
    Marta Sawicka, Julita Smalc-Koziorowska, Marcin Kryśko, Natalia Fiuczek, Paweł Wolny, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Crystal Growth & Design (rok: 2021, tom: 21, 9, strony: 5223-5230), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acs.cgd.1c00560 - link to the publication
  11. Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection
    Authors:
    Natalia Fiuczek, Marta Sawicka, Anna Feduniewicz-Żmuda, Marcin Siekacz, Mikołaj Żak, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muzioł, Paweł Wolny, John J. Kelly, Czesław Skierbiszewski
    Academic press:
    Acta Materialia (rok: 2022, tom: 234, strony: 118018), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.actamat.2022.118018 - link to the publication
  12. Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
    Authors:
    Henryk Turski, Paweł Wolny, Mikołaj Chlipala, Marta Sawicka, Anna Reszka, Paweł Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czesław Skierbiszewski
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 5929), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15175929 - link to the publication
  13. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content InGaN/InGaN Quantum Wells
    Authors:
    P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Żmuda, S. Grzanka, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 19, strony: 14044), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.19.014044 - link to the publication
  14. Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection
    Authors:
    Natalia Fiuczek, Marta Sawicka, Anna Feduniewicz-Żmuda, Marcin Siekacz, Mikołaj Żak, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muzioł, Paweł Wolny, John J. Kelly, Czesław Skierbiszewski
    Academic press:
    Acta Materialia (rok: 2022, tom: 234, strony: 118018), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.actamat.2022.118018 - link to the publication
  15. Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
    Authors:
    Henryk Turski, Paweł Wolny, Mikołaj Chlipala, Marta Sawicka, Anna Reszka, Paweł Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czesław Skierbiszewski
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 5929), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15175929 - link to the publication
  16. Composition Inhomogeneity in Nonpolar (101 ̅ 0) and Semipolar (202 ̅ 1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
    Authors:
    Marta Sawicka, Julita Smalc-Koziorowska, Marcin Kryśko, Natalia Fiuczek, Paweł Wolny, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Crystal Growth & Design (rok: 2021, tom: 21, 9, strony: 5223-5230), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acs.cgd.1c00560 - link to the publication
  17. Electrically pumped blue laser diodes with nanoporous bottom cladding
    Authors:
    Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 7, strony: 10709-10722), Wydawca: OPTICA
    Status:
    Published
    DOI:
    10.1364/OE.454359 - link to the publication
  18. Electrically pumped blue laser diodes with nanoporous bottom cladding
    Authors:
    Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 7, strony: 10709-10722), Wydawca: OPTICA
    Status:
    Published
    DOI:
    10.1364/OE.454359 - link to the publication
  19. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    Marcin Siekacz, Grzegorz Muziol, Henryk Turski, Mateusz Hajdel, Mikolaj Żak, Mikolaj Chlipała, Marta Sawicka, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Julita Smalc-Koziorowska, Szymon Stańczyk and Czeslaw Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481, 1-11), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy