Projects funded by the NCN
The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/GaN HEMT transistors
2015/19/D/ST7/02736
Keywords:
AlGaN/GaN HEMT implantation ion isolation defects electric properties
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST7_6: Communication technology, high-frequency technology
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Elektronowej
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 4
Call: SONATA 10 - announced on 2015-09-15
Amount awarded: 309 700 PLN
Project start date (Y-m-d): 2016-06-28
Project end date (Y-m-d): 2019-06-27
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled
Project description
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