Projects funded by the NCN
Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in metal/Al203/AlGaN/GaN structure by the photocapacitance versus excitation light intensity measurement.
2012/07/N/ST7/03336
Keywords:
aluminium compounds gallium compounds III-V semiconductors interface states MIS structures photocapacitance valence band wide band gap semiconductors
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne
woj. śląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 4 - announced on 2012-09-15
Amount awarded: 49 000 PLN
Project start date (Y-m-d): 2013-09-26
Project end date (Y-m-d): 2014-09-25
Project duration:: 12 months (the same as in the proposal)
Project status: Project settled