Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
Authors:
Mikolaj Amilusik , Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki and Michal Bockowski
Academic press:
MATERIALS (rok: 2022, tom: Volume 15 Issue 7 Article Numb, strony: 45305), Wydawca: MDPI
Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
Authors:
Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi
Academic press:
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (rok: 2022, tom: Volume 259 Issue 10 Article Nu, strony: 45303), Wydawca: WILEY-V C H VERLAG GMBH
GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
Authors:
Karolina Grabianska, Piotr Jaroszynski, Aneta Sidor, Michal Bockowski, Malgorzata Iwinska,
Academic press:
Electronics (rok: 2020, tom: 9, strony: 1342), Wydawca: MDPI
Growth of bulk GaN crystals
Authors:
R Kucharski, T Sochacki, B Lucznik, M Bockowski
Academic press:
Journal of Applied Physics (rok: 2020, tom: 128, strony: 50902), Wydawca: AIP Publishing
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Authors:
M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Yan Guan, Pegah Bagheri, Dennis Szymanski, Seiji Mita, Kacper Sierakowski, Michał Bockowski, Ramon Collazo, and Zlatko Sitar
Academic press:
Applied Physics Letters (rok: 2021, tom: 118, strony: 022101-1-6), Wydawca: AIP Publishing
High Pressure Processing of Ion Implanted GaN
Authors:
Kacper Sierakowski, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, Michal Bockowski
Academic press:
Electronics (rok: 2020, tom: 9, strony: 1380), Wydawca: MDPI
Investigation of beryllium diffusion in HVPE-GaN grown in [11-20] and [10-10] crystallographic directions
Authors:
Kacper Sierakowski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Pawel Kempisty, Marcin Turek, Michal Bockowski
Academic press:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (rok: 2022, tom: 139, strony: 106332), Wydawca: ELSEVIER SCI LTD
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-highpressure annealing
Authors:
Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai, Hajime Fujikura, Masahiro Horita, Yohei Otoki, Kacper Sierakowski, Michal Bockowski, Tetsu Kachi, and Jun Suda
Academic press:
Applied Physics Express (rok: 2021, tom: 14, strony: 056501-1-5), Wydawca: IOP Publishing
Recent progress in basic ammonothermal GaN crystal growth
Authors:
K. Grabianska, R. Kucharski, A. Puchalski, T. Sochacki, M. Bockowski
Academic press:
Journal of Crystal Growth (rok: 2020, tom: 547, strony: 125804), Wydawca: Elsevier B.V.
Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
Authors:
Hideki Sakurai, Tetsuo Narita, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Shinji Yamada, Kacper Sierakowski, Masahiro Horita, Nobuyuki Ikarashi, Michal Bockowski Jun Suda and Tetsu Kachi
Academic press:
Applied Physics Express (rok: 2021, tom: 14, strony: 111001), Wydawca: IOP Publishing
Investigation of diffusion mechanism of beryllium in GaN
Authors:
R. Jakiela, K. Sierakowski, T. Sochacki, M. Iwinska, M. Fijalkowski, A. Barcz, M. Bockowski,
Academic press:
Physica B: Physics of Condensed Matter (rok: 2020, tom: 594, strony: 45297), Wydawca: Elsevier
Progress on and challenges of p-type formation for GaN power devices
Authors:
Tetsuo Narita, Hikaru Yoshida, Kazuyoshi Tomita, Keita Kataoka, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Nobuyuki Ikarashi, Jun Suda, Tetsu Kachi, Yutaka Tokuda
Academic press:
Journal of Applied Physics (rok: 2020, tom: 128, strony: 90901), Wydawca: AIP Publishing
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
Authors:
Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Iwinska Malgorzata, Keita Kataoka, Masahiro Horita, Ikarashi Nobuyuki, Michal Bockowski, Suda Jun, Tetsu Kachi,
Academic press:
Applied Physics Express (rok: 2020, tom: 13, strony: 86501), Wydawca: IOP Publishing
Self-compensation of carbon in HVPE-GaN:C
Authors:
R. Piotrzkowski, M. Zajac, E. Litwin-Staszewska, and M. Bockowski
Academic press:
Applied Physics Letters (rok: 2020, tom: 117, strony: 12106), Wydawca: AIP Publishing
Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
Authors:
Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Kacper Sierakowski, Masahiro Horita, Michal Bockowski, Tetsu Kachi, and Jun Suda
Academic press:
Applied Physics Express (rok: 2021, tom: 14, strony: 121004-1-5), Wydawca: IOP Publishing
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
Authors:
Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Jun Suda, Shoji Ishibashi, Shigefusa F Chichibu, Tetsu Kachi,,
Academic press:
Scientific Reports (rok: 2020, tom: 10, strony: 45298), Wydawca: Nature Research
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
Authors:
H. Sakurai, M. Omori, S. Yamada, Y. Furukawa, H. Suzuki, T. Narita, K. Kataoka, M. Horita, M. Boćkowski, J. Suda, and T. Kachi
Academic press:
Applied Physics Letters (rok: 2019, tom: 115, strony: 142104), Wydawca: AMER INST PHYSICS
Mg-implanted bevel edge termination structure for GaN power device applications
Authors:
Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, and Tetsu Kachi
Academic press:
Applied Physics Letters (rok: 2021, tom: 118, strony: 093502-1-5), Wydawca: AIP Publishing
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
Authors:
Kachi, Tetsu; Narita, Tetsuo ; Sakurai, Hideki ; Matys, Maciej ; Kataoka, Keita ; Hirukawa, Kazufumi ; Ikarashi, Nobuyuki ; Sierakowski, Kacper ; Bockowski, Michal ; Suda, Jun
Academic press:
JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume 132 Issue 13 Article Nu, strony: 45305), Wydawca: AIP Publishing
Recent Progress in Crystal Growth of Bulk GaN
Authors:
M. Bockowski and I. Grzegory
Academic press:
ACTA PHYSICA POLONICA A (rok: 2022, tom: Volume141 Issue3, strony: 167-174), Wydawca: POLISH ACAD SCIENCES INST PHYSICS
Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration
Authors:
Takuya Nakashima, Emi Kano, Keita Kataoka, Shigeo Arai, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Masahiro Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Academic press:
Applied Physics Express (rok: 2021, tom: 14, strony: 011005-1-4), Wydawca: IOP Publishing
Thermal annealing of GaN implanted with Be
Authors:
M. A. Reshchikov, O. Andrieiev, M. Vorobiov, D. Ye, D. O. Demchenko, K. Sierakowski, M. Bockowski, B. McEwen, V. Meyers, and F. Shahedipour-Sandvik
Academic press:
JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume131 Issue12 Article Numb, strony: 45299), Wydawca: AIP Publishing
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Authors:
Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Academic press:
JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume 131 Issue 18 Article Nu, strony: 45299), Wydawca: AIP Publishing
Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
Authors:
Kenji Iwata, Hideki Sakurai, Shigeo Arai, Takuya Nakashima, Tetsuo Narita, Keita Kataoka, Michal Bockowski, Masaharu Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Academic press:
Journal of Applied Physics (rok: 2020, tom: 127, strony: 105106-1), Wydawca: AIP Publishing
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
Authors:
Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Keita Kataoka, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Tomoaki Nishimura, Jun Suda, and Tetsu Kachi
Academic press:
Applied Physics Express (rok: 2021, tom: 14, strony: 074002-1-4), Wydawca: IOP Publishing
Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing
Authors:
Tetsuo Narita, Hideki Sakurai, Michal Bockowski, Keita Kataoka, Jun Suda, and Tetsu Kachi
Academic press:
Applied Physics Express (rok: 2019, tom: 12, strony: 111005), Wydawca: IOP PUBLISHING LTD
X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN
Authors:
Masamichi Akazawa, Encheng Wu, Hideki Sakurai, Michal Bockowski, Tetsuo Narita, and Tetsu Kachi
Academic press:
Japanese Journal of Applied Physics (rok: 2021, tom: 60, strony: 036503-1-8), Wydawca: IOP Publishing