Projects funded by the NCN
Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors
2018/29/B/ST5/00338
Keywords:
gallium nitride vapor phase epitaxy eptaxial structures ion implantation high-power electronics
Descriptors:
- ST3_7: Spintronics
- ST7_2: Electrical engineering: power components and/or systems
- ST5_2: Solid-state materials
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 6
Call: OPUS 15 - announced on 2018-03-15
Amount awarded: 1 495 125 PLN
Project start date (Y-m-d): 2019-01-10
Project end date (Y-m-d): 2023-01-09
Project duration:: 48 months (the same as in the proposal)
Project status: Project settled
Project description
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