Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

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Radiative and non-radiative carbon and vacancy-related defects in GaN.

2020/37/B/ST5/02593

Keywords:

DLTS Laplace DLTS DLOS carbon vacancy defects

Descriptors:

  • ST5_002:
  • ST5_001:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Piotr Kruszewski 

Number of co-investigators in the project: 5

Call: OPUS 19 - announced on 2020-03-16

Amount awarded: 1 475 040 PLN

Project start date (Y-m-d): 2021-01-15

Project end date (Y-m-d): 2025-01-14

Project duration:: 48 months (the same as in the proposal)

Project status: Project completed

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (7)
  • Articles in post-conference publications (1)
  1. Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN
    Authors:
    P. Kruszewski ; P. Sai ; A. Krajewska ; K. Sakowski ; Y. Ivonyak; R. Jakiela; J. Plesiewicz; P. Prystawko
    Academic press:
    AIP Advances (rok: 2024, tom: 14, strony: 75312), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0210798 - link to the publication
  2. The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1− xN layers
    Authors:
    L. Sun ; P. Kruszewski ; V. P. Markevich ; C. A. Dawe ; A. R. Peaker ; I. F. Crowe ; J. Plesiewicz ; P. Prystawko ; Sz. Grzanka; E. Grzanka; R. Jakiela; D. Binks; M. P. Halsall
    Academic press:
    Journal of Applied Physics (rok: 2024, tom: 135, strony: 175702), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0205998 - link to the publication
  3. Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE
    Authors:
    J. Plesiewicz, P. Kruszewski, V.P. Markevich, P. Prystawko , S. Bulka, M. Hallsal, I. Crowe, L. Sun, A.R. Peaker
    Academic press:
    Microelectronic Engineering (rok: 2023, tom: 274, strony: 111977 - 7), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mee.2023.111977 - link to the publication
  4. Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN
    Authors:
    P. Kruszewski; V. P. Markevich; A. R. Peaker; J. Plesiewicz, P. Prystawko, M. P. Halsall, L. Sun
    Academic press:
    Applied Physics Letters (rok: 2023, tom: 123, strony: 222105 -6), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0184701 - link to the publication
  5. FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN
    Authors:
    P. Kruszewski ; J. Plesiewicz ; Sz. Grzanka ; E. Grzanka ; P. Prystawko ; V. P. Markevich; A. R. Peaker; L. Sun; C. A. Dawe; M. P. Halsall
    Academic press:
    Applied Physics Letters (rok: 2024, tom: 124, strony: 232103), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0209022 - link to the publication
  6. The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates
    Authors:
    P. Kruszewski, K. Sakowski, K. Gocinski and P. Prystawko
    Academic press:
    Applied Sciences (rok: 2024, tom: 14, strony: 8785), Wydawca: MDPI, Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/app14198785 - link to the publication
  7. Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN
    Authors:
    Vladimir P. Markevich, Matthew P. Halsall, Lijie Sun, Iain F. Crowe, Anthony R. Peaker, Piotr Kruszewski, Jerzy Plesiewicz, Pawel Prystawko, Sylwester Bulka, Rafal Jakiela
    Academic press:
    Physica Status Solidi B (rok: 2022, tom: 2200545, strony: 46029), Wydawca: Wiley-VCH
    Status:
    Published
    DOI:
    10.1002/pssb.202200545 - link to the publication
  1. The Radial Effect for E1 and E3 Deep Traps Concentration in n-GaN Layers
    Authors:
    P. Kruszewski, J. Plesiewicz, P. Prystawko, E. Grzanka, L. Marona
    Conference:
    Proceedings of the 50th International School & Conference on the Physics of Semiconductors Jaszowiec 2022 Szczyrk, Poland, June 4–10, 2022 (rok: 2022, tom: International School & Conference on the Physics of Semiconductors Jaszowiec 2022, strony: 611-614), Wydawca: Polish Academy of Science Institute of Physics
    Data:
    konferencja 2022
    Status:
    Published
    DOI:
    10.12693/APhysPolA.142.611 - link to the publication

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