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Information on the principal investigator and host institution

Information of the project and the call

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Impurity 3D diffusion in GaN - mechanism and the role of defects

2019/33/B/ST5/02756

Keywords:

gallium nitride doping diffusion

Descriptors:

  • ST5_1: Structural properties of materials

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

woj.

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Andrzej Wiesław Turos 

Number of co-investigators in the project: 11

Call: OPUS 17 - announced on 2019-03-15

Amount awarded: 1 316 200 PLN

Project start date (Y-m-d): 2020-02-05

Project end date (Y-m-d): 2024-05-04

Project duration:: 51 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (6)
  1. Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
    Authors:
    P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
    Academic press:
    Semiconductor Science and Technology (rok: 2021, tom: 36, strony: 45664), Wydawca: IOP Publishing LTD
    Status:
    Published
    DOI:
    10.1088/1361-6641/abe317 - link to the publication
  2. Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE
    Authors:
    J. Plesiewicz, P. Kruszewski, V.P. Markevich, P. Prystawko, S. Bulka, M. Hallsal , I. Crowe, L. Sun, A.R. Peake
    Academic press:
    Microelectronic Engineering (rok: 2023, tom: 274, strony: 111977-), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mee.2023.111977 - link to the publication
  3. Deep‑level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN
    Authors:
    Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska‑Skrobas, Jarosław Żelazko & Ewa Grzanka
    Academic press:
    Nature: Scientific Reports (rok: 2024, tom: 14, strony: 14272), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1038/s41598-024-65142-w - link to the publication
  4. Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
    Authors:
    P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
    Academic press:
    Semiconductor Science and Technology (rok: 2021, tom: 36, strony: 45664), Wydawca: IOP Publishing LTD
    Status:
    Published
    DOI:
    10.1088/1361-6641/abe317 - link to the publication
  5. Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
    Authors:
    P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
    Academic press:
    Semiconductor Science and Technology (rok: 2021, tom: 36, strony: 45664), Wydawca: IOP Publishing LTD
    Status:
    Published
    DOI:
    10.1088/1361-6641/abe317 - link to the publication
  6. Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
    Authors:
    P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
    Academic press:
    Semiconductor Science and Technology (rok: 2021, tom: 36, strony: 45664), Wydawca: IOP Publishing LTD
    Status:
    Published
    DOI:
    10.1088/1361-6641/abe317 - link to the publication

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