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Properties of InGaN waveguides and a model of leakage of optical modes to GaN substrate in laser diodes

2013/11/N/ST7/02788

Keywords:

InGaN waveguide laser diodes

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST3_12: Molecular electronics

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Wysokich Ciśnień PAN

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Other projects carried out by the institution 

Principal investigator (from the host institution):

Grzegorz Muzioł 

Number of co-investigators in the project: 2

Call: PRELUDIUM 6 - announced on 2013-09-16

Amount awarded: 149 988 PLN

Project start date (Y-m-d): 2014-07-15

Project end date (Y-m-d): 2017-07-14

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled