Projects funded by the NCN
Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structures.
2016/22/E/ST7/00526
Keywords:
lateral Schottky barrier diodes 2DEG GaN/AlGaN sub-THz THz photoresponse high frequency properties
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST3_7: Spintronics
- ST7_2: Electrical engineering: power components and/or systems
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 7
Call: SONATA BIS 6 - announced on 2016-06-15
Amount awarded: 1 439 600 PLN
Project start date (Y-m-d): 2017-04-04
Project end date (Y-m-d): 2022-04-03
Project duration:: 60 months (the same as in the proposal)
Project status: Project settled
Project description
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