Projects funded by the NCN
New method of fabrication of InGaN/GaN quantum wires
2015/17/B/ST5/02835
Keywords:
nitride semiconductors X-ray diffraction defects in crystals
Descriptors:
- ST5_1: Structural properties of materials
- ST3_7: Spintronics
- ST5_10: Functional materials/nanomaterials, nanoparticles
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 8
Call: OPUS 9 - announced on 2015-03-16
Amount awarded: 958 600 PLN
Project start date (Y-m-d): 2016-02-02
Project end date (Y-m-d): 2019-08-01
Project duration:: 42 months (the same as in the proposal)
Project status: Project settled
Project description
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Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.