Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Tunnel-junctions and highly resistive layers in GaN-based heterostructures

2016/21/B/ST7/01274

Keywords:

tunnel junction gallium nitride transistor light emitting diode

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Wrocławska

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Marta Gładysiewicz-Kudrawiec 

Number of co-investigators in the project: 4

Call: OPUS 11 - announced on 2016-03-15

Amount awarded: 1 189 300 PLN

Project start date (Y-m-d): 2017-02-24

Project end date (Y-m-d): 2021-02-23

Project duration:: 48 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Układ do pomiarów dużych rezystancji metodą mikrofalową (18 000 PLN)
  2. Chłodziarka helowa z elektrycznym oraz optycznym dostępem do próbek (140 000 PLN)
  3. Laser (120 000 PLN)
  4. laser o długości fali 405nm.

Information in the final report

  • Publication in academic press/journals (5)
  1. SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
    Authors:
    Ł. Janicki, H. Li, S. Keller, U. K. Mishra and R. Kudrawiec
    Academic press:
    Scientific Reports (rok: 2020, tom: 10, strony: 12099), Wydawca: Nature Publishing Group
    Status:
    Published
    DOI:
    10.1038/s41598-020-68963-7 - link to the publication
  2. Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and nonpolar InGaN quantum wells
    Authors:
    Michał Jarema , Marta Gładysiewicz , Łukasz Janicki , Ewelina Zdanowicz , Henryk Turski , Grzegorz Muzioł , Czesław Skierbiszewski , and Robert Kudrawiec
    Academic press:
    Journal of Applied Physics (rok: 2020, tom: 127, strony: 35702), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.5121368 - link to the publication
  3. Material gain in polar GaInN and AlGaN quantum wells: How to overcome the 'dead' width for light emitters in these QW systems?
    Authors:
    Marta Gładysiewicz, Czesław Skierbiszewski, Robert Kudrawiec
    Academic press:
    IEEE Journal of Selected Topics in Quantum Electronics (rok: 2022, tom: 28, strony: 1501509), Wydawca: IEEE Photonics Society
    Status:
    Published
    DOI:
    10.1109/JSTQE.2021.3114316 - link to the publication
  4. Electric Fields and Surface Fermi Level in Undoped GaN/ AlN Two-Dimensional Hole Gas Heterostructures
    Authors:
    Łukasz Janicki1, Reet Chaudhuri2, Samuel James Bader, Huili Grace Xing, Debdeep Jena and Robert Kudrawiec
    Academic press:
    Physica Satus Solidi (rok: 2021, tom: 15, strony: 2000573), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1002/pssr.202000573 - link to the publication
  5. On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells
    Authors:
    M. Jarema, M. Gladysiewicz, E. Zdanowicz, E. Bellet-Amalric, E. Monroy,2 and R. Kudrawiec
    Academic press:
    Semiconductor Science and Technology (rok: 2019, tom: 34, strony: 075021 (8pp)), Wydawca: IOP SCIENCE
    Status:
    Published
    DOI:
    10.1088/1361-6641/ab20dd - link to the publication

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