Projects funded by the NCN
Tunnel-junctions and highly resistive layers in GaN-based heterostructures
2016/21/B/ST7/01274
Keywords:
tunnel junction gallium nitride transistor light emitting diode
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Wrocławska
woj. dolnośląskie
Principal investigator (from the host institution):
dr hab. Marta Gładysiewicz-Kudrawiec
Number of co-investigators in the project: 4
Call: OPUS 11 - announced on 2016-03-15
Amount awarded: 1 189 300 PLN
Project start date (Y-m-d): 2017-02-24
Project end date (Y-m-d): 2021-02-23
Project duration:: 48 months (the same as in the proposal)
Project status: Project settled
Project description
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