Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

2023/49/B/ST5/03319

Keywords:

gallium nitride (GaN) ultra-high-pressure annealing (UHPA) diffusion in semiconductors point defects depth profiles

Descriptors:

  • ST3_01:
  • ST5_02:
  • ST3_05:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Michał Stanisław Boćkowski 

Number of co-investigators in the project: 6

Call: OPUS 25 - announced on 2023-03-16

Amount awarded: 1 388 800 PLN

Project start date (Y-m-d): 2024-01-03

Project end date (Y-m-d): 2027-01-02

Project duration:: 36 months (the same as in the proposal)

Project status: Pending project

Project description

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Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (2)
  1. Ultra-high-pressure annealing with a carbon capping layer as an activation method for Mg-ionimplanted GaN
    Authors:
    Kensuke Sumida1* , Junya Sahashi1, Kacper Sierakowski2, Tomasz Sochacki2, Shun Lu3, Masahiro Horita1,3, Michał Boćkowski2, Tetsu Kachi1,3, and Jun Suda1,3
    Academic press:
    Applied Physics Express (rok: 2025, tom: 18, strony: 091003-1/091003-5), Wydawca: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.35848/1882-0786/ae0866 - link to the publication
  2. Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
    Authors:
    K. Shima  ; T. Narita ; A. Uedono ; M. Bockowski ; J. Suda ; T. Kachi ; S. F. Chichibu
    Academic press:
    Journal of Applied Physics (rok: 2025, tom: 137, strony: 235702-1/ 235702-12), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0266700 - link to the publication