Projects funded by the NCN
Mechanisms of Schottky barrier formation and phenomena occuring at high temperatures in GaN-on-Si epitaxial structures with metal silicide contacts
2018/31/D/ST7/02901
Keywords:
GaN Schottky contact metal silicides Cu
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 5
Call: SONATA 14 - announced on 2018-09-14
Amount awarded: 997 600 PLN
Project start date (Y-m-d): 2019-07-11
Project end date (Y-m-d): 2023-07-10
Project duration:: 36 months (the same as in the proposal)
Project status: Project completed
Project description
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