Projects funded by the NCN

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54 projects found matching your search criteria :

  1. From nitride micro-LEDs to single photon emitters. Top-down approach.

    Call: OPUS 9 , Panel: ST7

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  2. GaN- and GaAs-based monolithic Vertical-Cavity Surface-Emitting Lasers

    Call: OPUS 8 , Panel: ST7

    Principal investigator: dr hab. Tomasz Czyszanowski

    Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

  3. Relationships between band structure and mechanism of light emission in superstructures In(Ga)N/GaN layers with variable...

    Call: SONATA 8 , Panel: ST3

    Principal investigator: dr Grzegorz Staszczak

    Instytut Wysokich Ciśnień PAN

  4. GaN nanostructures genereted in selective ICP etching process, initied by titanium thin film

    Call: PRELUDIUM 6 , Panel: ST7

    Principal investigator: Marek Ekielski

    Instytut Technologii Elektronowej

  5. Properties of InGaN waveguides and a model of leakage of optical modes to GaN substrate in laser diodes

    Call: PRELUDIUM 6 , Panel: ST7

    Principal investigator: Grzegorz Muzioł

    Instytut Wysokich Ciśnień PAN

  6. Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec...

    Call: OPUS 6 , Panel: ST3

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  7. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing ...

    Call: OPUS 5 , Panel: ST5

    Principal investigator: prof. Jerzy Janik

    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

  8. From strained alloys to superlattices - electronic and optical properties of nitride quantum structures

    Call: OPUS 1 , Panel: ST3

    Principal investigator: dr hab. Izabela Gorczyca

    Instytut Wysokich Ciśnień PAN

  9. Study of V -group acceptor dopants and their mutual influence on each other in Zn(Mg)O/GaN hetrostructures

    Call: SONATA 5 , Panel: ST3

    Principal investigator: dr Ewa Przeździecka

    Instytut Fizyki PAN

  10. Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in meta...

    Call: PRELUDIUM 4 , Panel: ST7

    Principal investigator: Maciej Matys

    Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne

  11. Influence of hydrostatic pressure and external electric and magnetic fields on topological insulator state in indium-ric...

    Call: OPUS 4 , Panel: ST3

    Principal investigator: dr hab. Sławomir Łepkowski

    Instytut Wysokich Ciśnień PAN

  12. Study of phenomena at the metal-semiconductor interface in semiconductor devices based on AlGaN/GaN heterostructures

    Call: SONATA 4 , Panel: ST7

    Principal investigator: dr Wojciech Macherzyński

    Politechnika Wrocławska, Wydział Elektroniki Mikrosystemów i Fotoniki

  13. Position of Fermi level on GaN surface and electric field distribution in AlGaN/GaN heterostructures grown on GaN substr...

    Call: OPUS 2 , Panel: ST3

    Principal investigator: dr hab. Robert Kudrawiec

    Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

  14. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

    Call: OPUS 25 , Panel: ST5

    Principal investigator: prof. Michał Boćkowski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  15. Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-1...

    Call: PRELUDIUM 2 , Panel: ST3

    Principal investigator: dr Marta Sawicka

    Instytut Wysokich Ciśnień PAN

  16. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

    Call: PRELUDIUM 21 , Panel: ST5

    Principal investigator: Wojciech Olszewski

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  17. Spectroscopic investigation of electronic phenomena at the lead-free perovskite/GaN interface

    Call: PRELUDIUM 21 , Panel: ST3

    Principal investigator: Ewelina Zdanowicz

    Politechnika Wrocławska

  18. Physics of GaN/AlGaN nanowire surfaces – towards more efficient nano-LEDs

    Call: OPUS 23 , Panel: ST5

    Principal investigator: prof. Bogdan Kowalski

    Instytut Fizyki Polskiej Akademii Nauk

  19. Hybrid photovoltaic detectors based on the van der Waals/(Al)GaN junction

    Call: OPUS 23 , Panel: ST7

    Principal investigator: prof. Robert Kudrawiec

    Politechnika Wrocławska

  20. Seizing the advantages of Nitrogen-polar GaN for III-nitride light emitters

    Call: SONATA 17 , Panel: ST3

    Principal investigator: dr hab. Henryk Turski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  21. Efficient UV light emitters and detectors based on GaN/AlGaN nanowire arrays with buried mirror and bottom metallic elec...

    Call: SONATA 17 , Panel: ST7

    Principal investigator: dr Marta Sobańska

    Instytut Fizyki Polskiej Akademii Nauk

  22. Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

    Call: PRELUDIUM 20 , Panel: ST5

    Principal investigator: Karolina Grabiańska

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  23. Thin films of transition metal dichalcogenides. The influence of the substrate on the MoTe2 structure, morphology and ma...

    Call: PRELUDIUM 20 , Panel: ST5

    Principal investigator: Zuzanna Ogorzałek

    Uniwersytet Warszawski, Wydział Fizyki

  24. Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu...

    Call: OPUS 21 , Panel: ST7

    Principal investigator: dr Grzegorz Staszczak

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  25. Metal vacancies, their complexes and clusters in nitride semiconductors.

    Call: WEAVE-UNISONO , Panel: ST5

    Principal investigator: dr Robert Filip Czernecki

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  26. The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

    Call: SONATA 16 , Panel: ST5

    Principal investigator: dr Tomasz Sochacki

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  27. Deep generative models for 3D representations

    Call: OPUS 19 , Panel: ST6

    Principal investigator: dr Maciej Zięba

    Politechnika Wrocławska

  28. Radiative and non-radiative carbon and vacancy-related defects in GaN.

    Call: OPUS 19 , Panel: ST5

    Principal investigator: dr Piotr Kruszewski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  29. As-induced VLS-MBE growth of dodecagonal GaN microrods

    Call: PRELUDIUM 19 , Panel: ST5

    Principal investigator: Paulina Ciechanowicz

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  30. Nanoporous GaN - a new platform for realization of quantum structures

    Call: SONATA 15 , Panel: ST5

    Principal investigator: dr Marta Sawicka

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  31. Terahertz plasma resonance in the grating-gate and fin-shaped channel AlGaN/GaN structures

    Call: PRELUDIUM 18 , Panel: ST7

    Principal investigator: Pavlo Sai

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  32. Impurity 3D diffusion in GaN - mechanism and the role of defects

    Call: OPUS 17 , Panel: ST5

    Principal investigator: prof. Andrzej Turos

    Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Materiałów Elektronicznych

  33. Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high...

    Call: PRELUDIUM 16 , Panel: ST7

    Principal investigator: Monika Masłyk

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  34. Mechanisms of Schottky barrier formation and phenomena occuring at high temperatures in GaN-on-Si epitaxial structures w...

    Call: SONATA 14 , Panel: ST7

    Principal investigator: dr Marek Wzorek

    Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

  35. In situ Characterization of MOVPE Growth Dynamics and of Diffusion Mechanisms in Nitrides and Their Influence on Optoele...

    Call: BEETHOVEN 3 , Panel: ST5

    Principal investigator: prof. Michał Leszczyński

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  36. Tracking ALICE - Fast Simulation based on Machine Learning Methods for the ALICE CERN

    Call: PRELUDIUM 16 , Panel: ST6

    Principal investigator: Kamil Deja

    Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

  37. Transparent electrical contacts for III-N structures based on van der Waals crystals

    Call: OPUS 15 , Panel: ST7

    Principal investigator: prof. Robert Kudrawiec

    Politechnika Wrocławska

  38. Structural factors (morphology of GaN nano-structure, metallic layer thickness, grain size and distribution, composition...

    Call: OPUS 1 , Panel: ST8

    Principal investigator: dr hab. Jan Weyher

    Instytut Wysokich Ciśnień PAN

  39. Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

    Call: OPUS 15 , Panel: ST5

    Principal investigator: dr hab. Michał Boćkowski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  40. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

    Call: OPUS 1 , Panel: ST5

    Principal investigator: prof. Jerzy Janik

    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

  41. Terahertz Plasma Wave Instabilities in GaN/AlGaN Nanowires

    Call: DAINA 1 , Panel: ST7

    Principal investigator: dr Maciej Sakowicz

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  42. Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

    Call: OPUS 12 , Panel: ST5

    Principal investigator: dr hab. Izabella Grzegory

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  43. GaN nanowires for new architecture of optoelectronic devices and sensors.

    Call: OPUS 12 , Panel: ST7

    Principal investigator: prof. Zbigniew Żytkiewicz

    Instytut Fizyki Polskiej Akademii Nauk

  44. Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structure...

    Call: SONATA BIS 6 , Panel: ST7

    Principal investigator: dr hab. Grzegorz Cywiński

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  45. Tunnel-junctions and highly resistive layers in GaN-based heterostructures

    Call: OPUS 11 , Panel: ST7

    Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

    Politechnika Wrocławska

  46. Studies of population inversion and optical gain of yellow and red light in rare earth doped silicate crystals optically...

    Call: OPUS 1 , Panel: ST7

    Principal investigator: prof. Witold Ryba-Romanowski

    Instytut Niskich Temperatur i Badań Strukturalnych im. Włodzimierza Trzebiatowskiego PAN

  47. Application of electron diffraction RHEED and mass spectroscopy QMS for in-situ analysis of nucleation and MBE growth of...

    Call: PRELUDIUM 11 , Panel: ST3

    Principal investigator: dr Marta Sobańska

    Instytut Fizyki Polskiej Akademii Nauk

  48. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

    Call: PRELUDIUM 1 , Panel: ST3

    Principal investigator: Paulina Kamyczek

    Politechnika Wrocławska

  49. Nanoengineering of functionalized Au/GaN surface: Dynamics of labile intermolecular interactions on the interface.

    Call: PRELUDIUM 10 , Panel: ST8

    Principal investigator: Igor Dzięcielewski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  50. Elaboration of manufacturing technology of SERS platforms on functionalized by etching GaN substrates as sensors for exa...

    Call: OPUS 10 , Panel: ST8

    Principal investigator: dr hab. Jan Weyher

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

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