Projects funded by the NCN

The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduc...

Call: SONATA 8 , Panel: ST7

Principal investigator: dr Szymon Grzanka

Instytut Wysokich Ciśnień PAN

The study of dynamics of spatially separated carriers in group III-N materials and structures

Call: PRELUDIUM 8 , Panel: ST7

Principal investigator: Łukasz Janicki

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Nitride superluminescent diodes with broadened gain spectrum

Call: PRELUDIUM 6 , Panel: ST7

Principal investigator: Anna Kafar

Instytut Wysokich Ciśnień PAN

Multiscale modelling of polar and non polar planes of wurtzite structure crystals with disorientation during growth and ...

Call: SONATA 6 , Panel: ST3

Principal investigator: dr Filip Krzyżewski

Instytut Fizyki PAN

Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing ...

Call: OPUS 5 , Panel: ST5

Principal investigator: prof. Jerzy Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Growth and composition optimization of dielectric layers for n-i-p structure applications

Call: PRELUDIUM 5 , Panel: ST5

Principal investigator: dr Sylwia Gierałtowska

Instytut Fizyki PAN

Measurements of nonlinear, elastic, piezoelectric, electrostrictive and dielectric constants for bulk gallium nitride

Call: OPUS 3 , Panel: ST3

Principal investigator: dr Michał Boćkowski

Instytut Wysokich Ciśnień PAN

Influence of the direction of crystallization front on the mechanisms of formation of magnesium impurity centers in gall...

Call: PRELUDIUM 3 , Panel: ST3

Principal investigator: Bogdan Sadovyi

Instytut Wysokich Ciśnień PAN

Analysis of thermal processes in diode lasers based on gallium nitride by thermoreflectance spectroscopy

Call: SONATA 2 , Panel: ST7

Principal investigator: dr Dorota Pierścińska

INSTYTUT TECHNOLOGII ELEKTRONOWEJ

Gallium nitride doped with beryllium -towards a new generation of light converters.

Call: OPUS 2 , Panel: ST3

Principal investigator: dr hab. Henryk Teisseyre

INSTYTUT FIZYKI PAN

Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Call: OPUS 25 , Panel: ST5

Principal investigator: prof. Michał Boćkowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Bidirectional light-emitting diodes for alternating current operation

Call: PRELUDIUM 22 , Panel: ST7

Principal investigator: Mikołaj Żak

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

Call: PRELUDIUM 21 , Panel: ST5

Principal investigator: Wojciech Olszewski

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Crystallization from vapor phase of bulk gallium nitride doped with germanium

Call: PRELUDIUM 20 , Panel: ST5

Principal investigator: Kacper Sierakowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Call: PRELUDIUM 20 , Panel: ST5

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu...

Call: OPUS 21 , Panel: ST7

Principal investigator: dr Grzegorz Staszczak

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Nitride-semiconductors laser diodes with polarization doping

Call: OPUS 20 , Panel: ST7

Principal investigator: prof. Piotr Perlin

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

Call: SONATA 16 , Panel: ST5

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Point defects in ammonothermal gallium nitride

Call: OPUS 19 , Panel: ST5

Principal investigator: dr Marcin Zając

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Ohmic contact to p-type Aluminium Gallium Nitride with high aluminium content

Call: PRELUDIUM 19 , Panel: ST7

Principal investigator: Katarzyna Opołczyńska

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Nanoporous GaN - a new platform for realization of quantum structures

Call: SONATA 15 , Panel: ST5

Principal investigator: dr Marta Sawicka

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Influence of build-in piezoelectric fields on performance of nitride laser diodes

Call: PRELUDIUM 18 , Panel: ST7

Principal investigator: Mateusz Hajdel

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Impurity 3D diffusion in GaN - mechanism and the role of defects

Call: OPUS 17 , Panel: ST5

Principal investigator: prof. Andrzej Turos

Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Materiałów Elektronicznych

Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Call: OPUS 15 , Panel: ST5

Principal investigator: dr hab. Michał Boćkowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Call: OPUS 1 , Panel: ST5

Principal investigator: prof. Jerzy Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Crystallization from vapor phase of highly resistive bulk gallium nitride doped with manganese.

Call: OPUS 13 , Panel: ST5

Principal investigator: dr hab. Michał Boćkowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

Call: OPUS 12 , Panel: ST5

Principal investigator: dr hab. Izabella Grzegory

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Tunnel-junctions and highly resistive layers in GaN-based heterostructures

Call: OPUS 11 , Panel: ST7

Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

Politechnika Wrocławska

Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Call: PRELUDIUM 1 , Panel: ST3

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska