Projects funded by the NCN
Gallium nitride doped with beryllium -towards a new generation of light converters.
2011/03/B/ST3/02647
Keywords:
Gallium nitride beryllium deep levels acceptor P-type doping.
Descriptors:
- ST3_7: Spintronics
- ST3_5: Physical properties of semiconductors and insulators
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
INSTYTUT FIZYKI PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 8
Call: OPUS 2 - announced on 2011-09-15
Amount awarded: 477 230 PLN
Project start date (Y-m-d): 2012-08-07
Project end date (Y-m-d): 2016-10-06
Project duration:: 50 months (the same as in the proposal)
Project status: Project settled