Projects funded by the NCN
The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduced of dislocations
2014/15/D/ST7/05288
Keywords:
galium nitride semicoductor diode voltage source betavoltaic
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_12: Electrical energy production, distribution and application
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 6
Call: SONATA 8 - announced on 2014-09-15
Amount awarded: 781 800 PLN
Project start date (Y-m-d): 2015-07-24
Project end date (Y-m-d): 2018-07-23
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled
Equipment purchased [PL]
- system do automatycznego mierzenia sygnałów EBIC (150 000 PLN)
- komputer (4 000 PLN)
- Źródło prądowo-napięciowe (35 000 PLN)
Information in the final report
- Publication in academic press/journals (1)
- Highly stable GaN-based betavoltaic structures grown on different dislocation density substratesAuthors:Szymon Grzanka, Lucja Marona, Przemysław Wiśniewski, Grzegorz Targowski, Barbara Zaręba, Krzysztof Wincel, Marcin Klimasz, Tomasz Lotz, Jacek Kacperski, Piotr Laskowski, Piotr PerlinAcademic press:Solid State Electronics (rok: 2020, tom: 167, strony: 107784), Wydawca: Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The NetherlandsStatus:PublishedDOI:10.1016/j.sse.2020.107784 - link to the publication