Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Crystallization from vapor phase of highly resistive bulk gallium nitride doped with manganese.

2017/25/B/ST5/02897

Keywords:

Gallium nitride crystallization from vapor phase doping semi-insulating material manganese

Descriptors:

  • ST5_2: Solid-state materials
  • ST5_19:
  • ST5_25:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Michał Boćkowski 

Number of co-investigators in the project: 6

Call: OPUS 13 - announced on 2017-03-15

Amount awarded: 934 200 PLN

Project start date (Y-m-d): 2018-01-19

Project end date (Y-m-d): 2020-01-18

Project duration:: 24 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Komputery z podstawowym oprogramowaniem i monitorami i wysokiej rozdzielczości obrazu (3 szt.) (21 000 PLN)

Information in the final report

  • Publication in academic press/journals (9)
  • Book publications / chapters in book publications (1)
  1. Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed
    Authors:
    T. Sochacki, S. Sintonen, J. L. Weyher, M. Amilusik, A. Sidor, M. Bockowski
    Academic press:
    JAPANESE JOURNAL OF APPLIED PHYSICS (rok: 2019, tom: 58, strony: Article Number: SCCB19), Wydawca: IOP PUBLISHING LTD
    Status:
    Published
    DOI:
    10.7567/1347-4065/ab0f15 - link to the publication
  2. Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals
    Authors:
    M. Bockowski, M. Iwinska, M. Amilusik, B. Lucznik, M. Fijalkowski, E. Litwin-Staszewska, R. Piotrzkowski, T. Sochacki
    Academic press:
    Journal of Crystal Growth (rok: 2018, tom: 499, strony: 45298), Wydawca: Elsevier B.V.
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2018.07.019 - link to the publication
  3. Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds
    Authors:
    M. Amilusik, T. Sochacki, M. Fijalkowski, B. Lucznik, M. Iwinska, A. Sidor, H. Teisseyre, J. Domagala, I. Grzegory, M Bockowski
    Academic press:
    JAPANESE JOURNAL OF APPLIED PHYSICS (rok: 2019, tom: 58, strony: Article Number: SC1030), Wydawca: IOP PUBLISHING LTD
    Status:
    Published
    DOI:
    10.7567/1347-4065/ab1065 - link to the publication
  4. Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds
    Authors:
    M. Amilusik, D. Wlodarczyk, A. Suchocki, M. Bockowski
    Academic press:
    JAPANESE JOURNAL OF APPLIED PHYSICS (rok: 2019, tom: 58, strony: Article Number: SCCB32), Wydawca: IOP PUBLISHING LTD
    Status:
    Published
    DOI:
    10.7567/1347-4065/ab1390 - link to the publication
  5. Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates
    Authors:
    E. Gaubas, P. Baronas, T. Čeponis, L. Deveikis, D. Dobrovolskas, E. Kuokstis, J. Mickevičius, V. Rumbauskas, M. Bockowski, M. Iwinska, T. Sochacki
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2019, tom: 91, strony: 341-355), Wydawca: Elsevier Ltd.
    Status:
    Published
    DOI:
    10.1016/j.mssp.2018.12.010 - link to the publication
  6. Electrical characterization of HVPE GaN containing different concentrations of carbon dopants
    Authors:
    E Gaubas, T Čeponis, L Deveikis, D Meskauskaite, J Pavlov, V Rumbauskas, M Bockowski and B Lucznik
    Academic press:
    Semiconductor Science and Technology (rok: 2018, tom: 33, strony: 45304), Wydawca: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/1361-6641/aaecf0 - link to the publication
  7. Homoepitaxial HVPE GaN: A potential substrate for high performance devices
    Authors:
    J.A. Freitas Jr, J.C. Culbertson, N.A. Mahadik, M.J. Tadjer, S. Wu, B. Raghothamachar, M. Dudley, T. Sochacki, M. Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2018, tom: 500, strony: 104-110), Wydawca: Elsevier B.V.
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2018.08.007 - link to the publication
  8. Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates
    Authors:
    Zvanut, ME.,Paudel, S., Glaser, ER., Iwinska, M., Sochacki T., Bockowski, M.
    Academic press:
    JOURNAL OF ELECTRONIC MATERIALS (rok: 2019, tom: 48 issue 4, strony: 2226-2232), Wydawca: SPRINGER
    Status:
    Published
    DOI:
    10.1007/s11664-019-07016-w - link to the publication
  9. Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds
    Authors:
    M. Iwinska , M. Zajac, B. Lucznik, M. Fijalkowski, M. Amilusik, T. Sochacki, E. Litwin-Staszewska, R. Piotrzkowski, I. Grzegory, and M.Bockowski
    Academic press:
    JAPANESE JOURNAL OF APPLIED PHYSICS (rok: 2019, tom: 58, strony: Article Number: SC1047), Wydawca: IOP PUBLISHING LTD
    Status:
    Published
    DOI:
    10.7567/1347-4065/ab1249 - link to the publication
  1. GaN-Based Materials: Substrates, Metalorganic Vapor Phase Epitaxy and Quantum Well Properties
    Authors:
    F. Scholz, M. Bockowski, and E. Grzanka
    Book:
    Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (rok: 2020, tom: 1, strony: 62-115), Wydawca: Wiley-VCH
    Status:
    Accepted for publication

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy