Projects funded by the NCN
Nitride-semiconductors laser diodes with polarization doping
2020/39/B/ST7/02945
Keywords:
laser diodes gallium nitride polarization doping internal electric field laser diode degradation low temperature operation.
Descriptors:
- ST3_5: Physical properties of semiconductors and insulators
- ST7_4: Micro- and nanosystems engineering
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 6
Call: OPUS 20 - announced on 2020-09-15
Amount awarded: 1 767 200 PLN
Project start date (Y-m-d): 2021-07-22
Project end date (Y-m-d): 2024-07-21
Project duration:: 36 months (the same as in the proposal)
Project status: Project completed
Project description
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