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Information on the principal investigator and host institution

Information of the project and the call

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Nitride-semiconductors laser diodes with polarization doping

2020/39/B/ST7/02945

Keywords:

laser diodes gallium nitride polarization doping internal electric field laser diode degradation low temperature operation.

Descriptors:

  • ST3_005:
  • ST7_004:

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Piotr Perlin 

Number of co-investigators in the project: 6

Call: OPUS 20 - announced on 2020-09-15

Amount awarded: 1 767 200 PLN

Project start date (Y-m-d): 2021-07-22

Project end date (Y-m-d): 2024-12-21

Project duration:: 41 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (1)
  1. Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
    Authors:
    381. Levchenko, I.; Kryvyi, S.; Kamińska, E.; Grzanka, S.; Grzanka, E.; Marona, Ł.; Perlin, P.
    Academic press:
    Materials , Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma16196568 - link to the publication

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