Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Nitride-semiconductors laser diodes with polarization doping

2020/39/B/ST7/02945

Keywords:

laser diodes gallium nitride polarization doping internal electric field laser diode degradation low temperature operation.

Descriptors:

  • ST3_005:
  • ST7_004:

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Piotr Perlin 

Number of co-investigators in the project: 6

Call: OPUS 20 - announced on 2020-09-15

Amount awarded: 1 767 200 PLN

Project start date (Y-m-d): 2021-07-22

Project end date (Y-m-d): 2024-12-21

Project duration:: 41 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (5)
  1. Optimization of P-Cladding Layer Utilizing Polarization Doping for Blue-Violet InGaN Laser Diodes
    Authors:
    Muhammed Aktas, Anna Kafar, Szymon Stańczyk, Łucja Marona, Dario Schiavon, Szymon Grzanka, Przemysław Wiśniewski, and Piotr Perlin
    Academic press:
    Optics and Laser Technology (rok: 2024, tom: 177, strony: 111144), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.optlastec.2024.111144 - link to the publication
  2. Hybrid Electroluminescence Device for On-Demand Single Photon Generation at Room Temperature
    Authors:
    Aleksander Rodek, Mateusz Hajdel, Kacper Oreszczuk, Anna Kafar, Muhammed Aktas, Łucja Marona, Marek Potemski, Czeslaw Skierbiszewski, Piotr Kossacki
    Academic press:
    Advanced Optical; Materials (rok: 2025, tom: 2025, strony: 2401879), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/adom.202401879 - link to the publication
  3. Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation
    Authors:
    Aktas, M.; Grzanka, S.; Marona, Ł.; Goss, J.; Staszczak, G.; Kafar, A.; Perlin, P
    Academic press:
    Materials (rok: 2024, tom: 17, strony: 4502), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma17184502 - link to the publication
  4. Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
    Authors:
    Levchenko, I.; Kryvyi, S.; Kamińska, E.; Grzanka, S.; Grzanka, E.; Marona, Ł.; Perlin, P.
    Academic press:
    Materials (rok: 2023, tom: 16, strony: 6568), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma16196568 - link to the publication
  5. Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
    Authors:
    381. Levchenko, I.; Kryvyi, S.; Kamińska, E.; Grzanka, S.; Grzanka, E.; Marona, Ł.; Perlin, P.
    Academic press:
    Materials (rok: 2023, tom: 16, strony: 6568), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma16196568 - link to the publication

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