Projects funded by the NCN
Growth and composition optimization of dielectric layers for n-i-p structure applications
2013/09/N/ST5/00901
Keywords:
zinc oxide gallium nitride heterojunction dielectric layer atomic layer deposition
Descriptors:
- ST5_4: Thin films
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Fizyki PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 5 - announced on 2013-03-15
Amount awarded: 140 400 PLN
Project start date (Y-m-d): 2014-02-20
Project end date (Y-m-d): 2017-02-19
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled