Projects funded by the NCN
Point defects in ammonothermal gallium nitride
2020/37/B/ST5/03746
Keywords:
semiconductors gallium nitride point defects
Descriptors:
- ST5_2: Solid-state materials
- ST5_13: Research methods on materials/nanomaterials properties
- ST3_5: Physical properties of semiconductors and insulators
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 4
Call: OPUS 19 - announced on 2020-03-16
Amount awarded: 1 429 200 PLN
Project start date (Y-m-d): 2021-01-14
Project end date (Y-m-d): 2024-01-13
Project duration:: 36 months (the same as in the proposal)
Project status: Project completed
Project description
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