Projects funded by the NCN

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Information of the project and the call

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Point defects in ammonothermal gallium nitride

2020/37/B/ST5/03746

Keywords:

semiconductors gallium nitride point defects

Descriptors:

  • ST5_2: Solid-state materials
  • ST5_13: Research methods on materials/nanomaterials properties
  • ST3_5: Physical properties of semiconductors and insulators

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj.

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Marcin Zając 

Number of co-investigators in the project: 4

Call: OPUS 19 - announced on 2020-03-16

Amount awarded: 1 429 200 PLN

Project start date (Y-m-d): 2021-01-14

Project end date (Y-m-d): 2025-01-13

Project duration:: 48 months (the same as in the proposal)

Project status: Project completed

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (21)
  1. Defect-related photoluminescence from ammono GaN
    Authors:
    M. A. Reshchikov, M. Vorobiov, K. Grabiańska, M. Zajac, M. Iwinska, M. Bockowski
    Academic press:
    Journal of Applied Physics (rok: 2021, tom: 129, strony: 95703), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0045019 - link to the publication
  2. Low-Temperature Electrical Transport Properties of Molecular Beam Epitaxy-Grown Mg-Doped GaN Subjected to a High-Temperature Annealing Process
    Authors:
    Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
    Academic press:
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (rok: 2023, tom: 2023, strony: 2200769), Wydawca: WILEY-V C H VERLAG GMBH
    Status:
    Published
    DOI:
    10.1002/pssa.202200769 - link to the publication
  3. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
    Authors:
    Mikolaj Amilusik,Marcin Zajac,Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki,Michal Bockowski
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 2379), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15072379 - link to the publication
  4. The effect of annealing on photoluminescence from defects in ammonothermal GaN
    Authors:
    M. A. Reshchikov, D. O. Demchenko, D. Ye, , O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
    Academic press:
    Journal of Applied Physics (rok: 2022, tom: 131, strony: 35704), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0077796 - link to the publication
  5. Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN
    Authors:
    Marcin Zajac, Paweł Kaminski, Roman Kozlowski, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Karolina Grabianska, Robert Kucharski and Rafal Jakiela
    Academic press:
    MDPI Materials (rok: 2024, tom: 17, strony: 1160), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma17051160 - link to the publication
  6. Role of carbon in n-type bulk GaN crystals
    Authors:
    M. Amilusik, M. Zajac, M. Fijalkowski, M. Iwinska, T. Sochacki, D. Wlodarczyk, A.K. Somakumar, R. Jakiela, A. Suchocki, M. Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2024, tom: 632, strony: 127641), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2024.127641 - link to the publication
  7. Electrical Transport Properties of Highly Doped N-Type GaN Materials
    Authors:
    L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semicoductor Science and Technology (rok: 2022, ), Wydawca: IOP Publishing Ltd.
    Status:
    Accepted for publication
    DOI:
    10.1088/1361-6641/ac5e01 - link to the publication
  8. Carbon doped semi-insulating freestanding GaN crystals by ethylene
    Authors:
    Qiang Liu, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, Xinqiang Wang
    Academic press:
    Applied Physics Letters (rok: 2022, tom: 121, strony: 172103), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0118250 - link to the publication
  9. Low-Temperature Electrical Transport Properties of Molecular Beam Epitaxy-Grown Mg-Doped GaN Subjected to a High-Temperature Annealing Process
    Authors:
    Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
    Academic press:
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (rok: 2023, tom: 2023, strony: 2200769), Wydawca: WILEY-V C H VERLAG GMBH
    Status:
    Published
    DOI:
    10.1002/pssa.202200769 - link to the publication
  10. Electrical transport properties of highly doped N-type GaN materials
    Authors:
    L. Konczewicz, E. Litwin-Staszewska; M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipala, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semiconductor Science and Technology (rok: 2022, tom: 37, strony: 55012), Wydawca: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/1361-6641/ac5e01 - link to the publication
  11. Electrical Transport Properties of Highly Doped N-Type GaN Materials
    Authors:
    L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semicoductor Science and Technology (rok: 2022, ), Wydawca: IOP Publishing Ltd.
    Status:
    Accepted for publication
    DOI:
    10.1088/1361-6641/ac5e01 - link to the publication
  12. The effect of annealing on photoluminescence from defects in ammonothermal GaN
    Authors:
    M. A. Reshchikov, D. O. Demchenko, D. Ye, , O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
    Academic press:
    Journal of Applied Physics (rok: 2022, tom: 131, strony: 35704), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0077796 - link to the publication
  13. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
    Authors:
    Mikolaj Amilusik,Marcin Zajac,Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki,Michal Bockowski
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 2379), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15072379 - link to the publication
  14. Negative Magnetoresistivity in Highly Doped n-Type GaN
    Authors:
    Leszek Konczewicz, ,Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała,Sandrine Juillaguet, Sylvie Contreras
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 7069), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15207069 - link to the publication
  15. Electrical transport properties of highly doped N-type GaN materials
    Authors:
    L. Konczewicz, E. Litwin-Staszewska; M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipala, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semiconductor Science and Technology (rok: 2022, tom: 37, strony: 55012), Wydawca: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/1361-6641/ac5e01 - link to the publication
  16. Negative Magnetoresistivity in Highly Doped n-Type GaN
    Authors:
    Leszek Konczewicz, ,Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała,Sandrine Juillaguet, Sylvie Contreras
    Academic press:
    Materials (rok: 2022, tom: 15, strony: 7069), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15207069 - link to the publication
  17. The effect of annealing on photoluminescence from defects in ammonothermal GaN
    Authors:
    M. A. Reshchikov, D. O. Demchenko, D. Ye, , O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
    Academic press:
    Journal of Applied Physics (rok: 2022, tom: 131, strony: 35704), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0077796 - link to the publication
  18. Carbon doped semi-insulating freestanding GaN crystals by ethylene
    Authors:
    Qiang Liu, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, Xinqiang Wang
    Academic press:
    Applied Physics Letters (rok: 2022, tom: 121, strony: 172103), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0118250 - link to the publication
  19. Defect-related photoluminescence from ammono GaN
    Authors:
    M. A. Reshchikov, M. Vorobiov, K. Grabiańska, M. Zajac, M. Iwinska, M. Bockowski
    Academic press:
    Journal of Applied Physics (rok: 2021, tom: 129, strony: 95703), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0045019 - link to the publication
  20. Defect-related photoluminescence from ammono GaN
    Authors:
    M. A. Reshchikov, M. Vorobiov, K. Grabiańska, M. Zajac, M. Iwinska, M. Bockowski
    Academic press:
    Journal of Applied Physics (rok: 2021, tom: 129, strony: 95703), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0045019 - link to the publication
  21. Electrical Transport Properties of Highly Doped N-Type GaN Materials
    Authors:
    L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semicoductor Science and Technology (rok: 2022, ), Wydawca: IOP Publishing Ltd.
    Status:
    Accepted for publication
    DOI:
    10.1088/1361-6641/ac5e01 - link to the publication

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