Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Measurements of nonlinear, elastic, piezoelectric, electrostrictive and dielectric constants for bulk gallium nitride

2012/05/B/ST3/02516

Keywords:

gallium nitride material constants nonlinearity elasticity piezoelectricity electrostriction dielectric polarization

Descriptors:

  • ST3_2: Mechanical and acoustical properties of condensed matter, lattice dynamics
  • ST3_7: Spintronics
  • ST3_6: Macroscopic quantum phenomena: superconductivity, superfluidity, etc.

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Michał Boćkowski 

Number of co-investigators in the project: 5

Call: OPUS 3 - announced on 2012-03-15

Amount awarded: 375 460 PLN

Project start date (Y-m-d): 2013-01-22

Project end date (Y-m-d): 2016-11-21

Project duration:: 46 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Ultratermostat.
  2. Wzmacniacz szerokopasmowy.
  3. Generator sygnałowy (17 000 PLN)
  4. Oscyloskop cyfrowy + 2 sondy 10x.
  5. Woltomierz wektorowy (28 000 PLN)

Information in the final report

  • Publication in academic press/journals (7)
  1. Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction
    Authors:
    P. Witczak, P. Kempisty, P. Strąk, S. Krukowski
    Academic press:
    Journal of Vacuum Science & Technology A (rok: 2015, tom: 33, strony: 61101), Wydawca: American Vacuum Society
    Status:
    Published
    DOI:
    10.1116/1.4927166 - link to the publication
  2. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds
    Authors:
    M. Iwinska, R. Piotrzkowski, E. Litwin-Staszewska, T. Sochacki, M. Amilusik, M. Fijalkowski, B. Lucznik, and M.Bockowski
    Academic press:
    Applied Physics Express (rok: 2017, tom: 10, strony: 011003-1 - 011003-4), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    brak - link to the publication
  3. Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
    Authors:
    P. Witczak, Z. Witczak, R. Jemielniak, M. Kryśko, S. Krukowski, M. Boćkowski
    Academic press:
    Semiconductor Science and Technology (rok: 2015, tom: 30, strony: 35008), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/0268-1242/30/3/035008 - link to the publication
  4. Challenges and future perspectives in HVPEGaN growth on ammonothermal GaN seeds
    Authors:
    M. Bockowski, M. Iwinska, M. Amilusik, M. Fijalkowski, B. Lucznik and T. Sochacki
    Academic press:
    Semiconductor Science and Technology (rok: 2016, tom: 31, strony: 45316), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/0268-1242/31/9/093002 - link to the publication
  5. Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results
    Authors:
    B. Lucznik, M.Iwinska, T.Sochacki, M.Amilusik, M.Fijalkowski, I.Grzegory, M.Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2016, tom: 456, strony: 86-90), Wydawca: Elsevier
    Status:
    Published
    DOI:
    brak - link to the publication
  6. Homoepitaxial growth of HVPE-GaN doped with Si
    Authors:
    M. Iwinska, T.Sochacki, M.Amilusik, P.Kempisty, B.Lucznik, M.Fijalkowski, E. Litwin-Staszewska, J.Smalc-Koziorowska, A.Khapuridze, G.Staszczak, I.Grzegory, M. Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2016, tom: 456, strony: 91-96), Wydawca: Elsevier
    Status:
    Published
    DOI:
    brak - link to the publication
  7. Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
    Authors:
    J.Z. Domagala, J.Smalc-Koziorowska, M.Iwinska, T.Sochacki, M.Amilusik, B. Lucznik, M.Fijalkowski, G.Kamler, I.Grzegory, R.Kucharski, M.Zajac, M. Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2016, tom: 456, strony: 80-85), Wydawca: Elsevier
    Status:
    Published
    DOI:
    brak - link to the publication

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy