Search results

1. Obtaining and characterisation of novel gallium-containing wide-band-gap oxides for optoelectronics

Principal investigator: prof. Yaroslav Zhydachevskyy

Instytut Fizyki PAN

Call: OPUS 27, Panel: ST11

2. Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride

Principal investigator: dr Mikołaj Bazyli Amilusik

Instytut Wysokich Ciśnień PAN

Call: SONATA 20, Panel: ST5

3. Impact of indium, gallium, germanium and tellurium as a valuable Technology Critical Elements on the environment, accord…

Principal investigator: prof. Magdalena Anna Jabłońska-Czapla

Instytut Podstaw Inżynierii Środowiska Polskiej Akademii Nauk

Call: OPUS 27, Panel: ST10

4. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Principal investigator: prof. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 25, Panel: ST5

5. Crystallization from vapor phase of bulk gallium nitride doped with germanium

Principal investigator: Kacper Paweł Sierakowski

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 20, Panel: ST5

6. Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 20, Panel: ST5

7. Effects of Ion Implantation on Defect formation and Doping of Gallium Oxide

Principal investigator: dr hab. Iraida N. Demchenko

Instytut Fizyki Plazmy i Laserowej Mikrosyntezy im. Sylwestra Kaliskiego

Call: OPUS 20, Panel: ST5

8. Point defects in ammonothermal gallium nitride

Principal investigator: dr Marcin Zając

Instytut Wysokich Ciśnień PAN

Call: OPUS 19, Panel: ST5

9. Ohmic contact to p-type Aluminium Gallium Nitride with high aluminium content

Principal investigator: Katarzyna Karolina Opołczyńska

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: PRELUDIUM 19, Panel: ST7

10. Crystallization from vapor phase of highly resistive bulk gallium nitride doped with manganese.

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 13, Panel: ST5

11. Measurements of nonlinear, elastic, piezoelectric, electrostrictive and dielectric constants for bulk gallium nitride

Principal investigator: dr Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 3, Panel: ST3

12. Influence of interlayer atomic structure on the electronic properties of the metal/semiconductor junction involving high…

Principal investigator: dr hab. Dariusz Chrobak

UNIWERSYTET ŚLĄSKI, Wydział Informatyki i Nauki o Materiałach

Call: OPUS 3, Panel: ST8

13. Influence of the direction of crystallization front on the mechanisms of formation of magnesium impurity centers in gall…

Principal investigator: Bogdan Sadovyi

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 3, Panel: ST3

14. Analysis of thermal processes in diode lasers based on gallium nitride by thermoreflectance spectroscopy

Principal investigator: dr Dorota Iwona Pierścińska

Instytut Technologii Elektronowej

Call: SONATA 2, Panel: ST7

15. Gallium nitride doped with beryllium -towards a new generation of light converters.

Principal investigator: dr hab. Henryk Teisseyre

Instytut Fizyki PAN

Call: OPUS 2, Panel: ST3

16. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 1, Panel: ST5

17. A comprehensive approach to the studies of gallium oxide implanted with rare-earth ions for future optoelectronic device…

Principal investigator: dr Renata Katarzyna Ratajczak

Narodowe Centrum Badań Jądrowych

Call: OPUS 23, Panel: ST5

18. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

Principal investigator: Wojciech Tomasz Olszewski

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: PRELUDIUM 21, Panel: ST5

19. Desig and physicochemical, thermal properties of low temperature metal alloys based on gallium

Principal investigator: dr Tomasz Jan Gancarz

Instytut Metalurgii i Inżynierii Materiałowej im. Aleksandra Krupkowskiego PAN

Call: OPUS 11, Panel: ST8

20. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska

Call: PRELUDIUM 1, Panel: ST3

21. SMARTdress: Innovative pH-Responsive Dressings for Diabetic Wound Healing

Principal investigator: prof. Elżbieta Pamuła

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie

Call: OPUS 29, Panel: ST5

22. GNOMES – GaN Nanowires with Oxide shells: Modification and Enhancement by Surface engineering

Principal investigator: Radosław Szymon

Politechnika Wrocławska

Call: PRELUDIUM 24, Panel: ST11

23. Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation

Principal investigator: dr Grzegorz Muzioł

Instytut Wysokich Ciśnień PAN

Call: OPUS 26 (LAP), Panel: ST7

24. Bidirectional light-emitting diodes for alternating current operation

Principal investigator: Mikołaj Józef Żak

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 22, Panel: ST7

25. Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu…

Principal investigator: dr Grzegorz Tomasz Staszczak

Instytut Wysokich Ciśnień PAN

Call: OPUS 21, Panel: ST7

26. Nitride-semiconductors laser diodes with polarization doping

Principal investigator: prof. Piotr Perlin

Instytut Wysokich Ciśnień PAN

Call: OPUS 20, Panel: ST7

27. Thermophysical properties of liquid Ga-Sn-Zn alloys

Principal investigator: Alexandra Daphne Mercedes Dobosz

Instytut Metalurgii i Inżynierii Materiałowej im. Aleksandra Krupkowskiego PAN

Call: ETIUDA 8, Panel: ST5

28. Nanoporous GaN - a new platform for realization of quantum structures

Principal investigator: dr Marta Łucja Sawicka

Instytut Wysokich Ciśnień PAN

Call: SONATA 15, Panel: ST5

29. Influence of build-in piezoelectric fields on performance of nitride laser diodes

Principal investigator: Mateusz Jakub Hajdel

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 18, Panel: ST7

30. Design and characterization of nanometric oxide layers obtained from liquid metals

Principal investigator: Alexandra Daphne Mercedes Dobosz

Instytut Metalurgii i Inżynierii Materiałowej im. Aleksandra Krupkowskiego PAN

Call: PRELUDIUM 18, Panel: ST5

31. Impurity 3D diffusion in GaN - mechanism and the role of defects

Principal investigator: prof. Andrzej Wiesław Turos

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

Call: OPUS 17, Panel: ST5

32. Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 15, Panel: ST5

33. Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

Principal investigator: dr hab. Izabella Alicja Grzegory

Instytut Wysokich Ciśnień PAN

Call: OPUS 12, Panel: ST5

34. Tunnel-junctions and highly resistive layers in GaN-based heterostructures

Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

Politechnika Wrocławska

Call: OPUS 11, Panel: ST7

35. The study of dynamics of spatially separated carriers in group III-N materials and structures

Principal investigator: Łukasz Krzysztof Janicki

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Call: PRELUDIUM 8, Panel: ST7

36. Nitride superluminescent diodes with broadened gain spectrum

Principal investigator: Anna Wanda Kafar

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 6, Panel: ST7

37. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing …

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 5, Panel: ST5

38. Growth and composition optimization of dielectric layers for n-i-p structure applications

Principal investigator: dr Sylwia Aldona Gierałtowska

Instytut Fizyki PAN

Call: PRELUDIUM 5, Panel: ST5

39. Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in meta…

Principal investigator: Maciej Franciszek Matys

Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne

Call: PRELUDIUM 4, Panel: ST7

40. In vitro and in vivo investigations of the radiometals influence on the ability of CCK2R receptors imaging by the radiol…

Principal investigator: dr hab. Renata Radosława Mikołajczak

Narodowe Centrum Badań Jądrowych

Call: OPUS 2, Panel: ST5

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