Projects funded by the NCN
Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE
2022/45/N/ST5/03912
Keywords:
GaN GaNAs Arsenic MOVPE Epitaxy III-Nitrides
Descriptors:
- ST5_012:
- ST3_005:
- ST5_001:
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii
woj. dolnośląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 2
Call: PRELUDIUM 21 - announced on 2022-03-28
Amount awarded: 209 230 PLN
Project start date (Y-m-d): 2023-02-03
Project end date (Y-m-d): 2026-02-02
Project duration:: 36 months (the same as in the proposal)
Project status: Pending project
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
- Publication in academic press/journals (1)
- Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPEAuthors:Wojciech Olszewski*, Dominika Majchrzak, Miłosz Grodzicki, Jarosław Serafińczuk, Sandeep Gorantla, Damian Pucicki, Paweł Piotr Michałowski, Robert Kudrawiec, and Detlef HommelAcademic press:Crystal Growth & Design (rok: 2024, tom: 24, strony: 4057-4064), Wydawca: ACSStatus:PublishedDOI:10.1021/acs.cgd.3c01486 - link to the publication