Zmiana języka

Projects search

Point defects in ammonothermal gallium nitride

2020/37/B/ST5/03746

Keywords

Descriptors

  • ST5_002: Materiały o strukturze ciała stałego
  • ST5_013: Metody badań materiałów /nanomateriałów
  • ST3_005: Fizyczne własności półprzewodników i izolatorów

Panel

ST5 – Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution

Instytut Wysokich Ciśnień PAN

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Marcin Zając

Number of co-investigators in the project: 4

Call

OPUS 19 – announced on 2020-03-16

Amount awarded
1 429 200 PLN
Project start date
2021-01-14
Project end date
2026-07-13
Project duration
66 months (the same as in the proposal)
Project status
Pending project

Project description

Download the project description in a pdf file

Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

Publication in academic press/journals (10)

  1. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

    Authors:
    Mikolaj Amilusik,Marcin Zajac,Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki,Michal Bockowski
    Academic press:
    Materials (year: 2022, volume: 15, pages: 2379), Publisher: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15072379 – link to the publication

  2. Low-Temperature Electrical Transport Properties of Molecular Beam Epitaxy-Grown Mg-Doped GaN Subjected to a High-Temperature Annealing Process

    Authors:
    Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
    Academic press:
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (year: 2023, volume: 2023, pages: 2200769), Publisher: WILEY-V C H VERLAG GMBH
    Status:
    Published
    DOI:
    10.1002/pssa.202200769 – link to the publication

  3. Role of carbon in n-type bulk GaN crystals

    Authors:
    M. Amilusik, M. Zajac, M. Fijalkowski, M. Iwinska, T. Sochacki, D. Wlodarczyk, A.K. Somakumar, R. Jakiela, A. Suchocki, M. Bockowski
    Academic press:
    Journal of Crystal Growth (year: 2024, volume: 632, pages: 127641), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2024.127641 – link to the publication

  4. Negative Magnetoresistivity in Highly Doped n-Type GaN

    Authors:
    Leszek Konczewicz, ,Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała,Sandrine Juillaguet, Sylvie Contreras
    Academic press:
    Materials (year: 2022, volume: 15, pages: 7069), Publisher: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15207069 – link to the publication

  5. Carbon doped semi-insulating freestanding GaN crystals by ethylene

    Authors:
    Qiang Liu, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, Xinqiang Wang
    Academic press:
    Applied Physics Letters (year: 2022, volume: 121, pages: 172103), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0118250 – link to the publication

  6. Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

    Authors:
    Marcin Zajac, Paweł Kaminski, Roman Kozlowski, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Karolina Grabianska, Robert Kucharski and Rafal Jakiela
    Academic press:
    MDPI Materials (year: 2024, volume: 17, pages: 1160), Publisher: MDPI
    Status:
    Published
    DOI:
    10.3390/ma17051160 – link to the publication

  7. The effect of annealing on photoluminescence from defects in ammonothermal GaN

    Authors:
    M. A. Reshchikov, D. O. Demchenko, D. Ye, , O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
    Academic press:
    Journal of Applied Physics (year: 2022, volume: 131, pages: 35704), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0077796 – link to the publication

  8. Defect-related photoluminescence from ammono GaN

    Authors:
    M. A. Reshchikov, M. Vorobiov, K. Grabiańska, M. Zajac, M. Iwinska, M. Bockowski
    Academic press:
    Journal of Applied Physics (year: 2021, volume: 129, pages: 95703), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0045019 – link to the publication

  9. Electrical transport properties of highly doped N-type GaN materials

    Authors:
    L. Konczewicz, E. Litwin-Staszewska; M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipala, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
    Academic press:
    Semiconductor Science and Technology (year: 2022, volume: 37, pages: 55012), Publisher: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/1361-6641/ac5e01 – link to the publication

  10. P-type conductivity in GaN:Be epitaxial layers

    Authors:
    M. Zajac, M. A. Reshchikov, B. McEwen, F. Shahendipour-Sandvik
    Academic press:
    Journal of Applied Physics (year: 2025, volume: 138, pages: 95705), Publisher: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0283055 – link to the publication

« New search

Graphic design and implementation: Jakub Piotrowski