Projects funded by the NCN
Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride
2023/49/B/ST5/03319
Keywords:
gallium nitride (GaN) ultra-high-pressure annealing (UHPA) diffusion in semiconductors point defects depth profiles
Descriptors:
- ST3_1: Structure of solids, material growth and characterisation
- ST5_2: Solid-state materials
- ST3_5: Physical properties of semiconductors and insulators
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 6
Call: OPUS 25 - announced on 2023-03-16
Amount awarded: 1 388 800 PLN
Project start date (Y-m-d): 2024-01-03
Project end date (Y-m-d): 2026-01-02
Project duration:: 24 months (the same as in the proposal)
Project status: Pending project
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.