Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

2018/29/B/ST5/00338

Keywords:

gallium nitride vapor phase epitaxy eptaxial structures ion implantation high-power electronics

Descriptors:

  • ST3_7:
  • ST7_2:
  • ST5_2:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Michał Stanisław Boćkowski 

Number of co-investigators in the project: 6

Call: OPUS 15 - announced on 2018-03-15

Amount awarded: 1 495 125 PLN

Project start date (Y-m-d): 2019-01-10

Project end date (Y-m-d): 2023-01-09

Project duration:: 48 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Komputery z podstawowym oprogramowaniem (4 szt.) (24 000 PLN)

Information in the final report

  • Publication in academic press/journals (35)
  • Book publications / chapters in book publications (2)
  1. Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-highpressure annealing
    Authors:
    Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai, Hajime Fujikura, Masahiro Horita, Yohei Otoki, Kacper Sierakowski, Michal Bockowski, Tetsu Kachi, and Jun Suda
    Academic press:
    Applied Physics Express (rok: 2021, tom: 14, strony: 056501-1-5), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/abf4f3 - link to the publication
  2. Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
    Authors:
    Hideki Sakurai, Tetsuo Narita, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Shinji Yamada, Kacper Sierakowski, Masahiro Horita, Nobuyuki Ikarashi, Michal Bockowski Jun Suda and Tetsu Kachi
    Academic press:
    Applied Physics Express (rok: 2021, tom: 14, strony: 111001), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/ac2ae7 - link to the publication
  3. Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
    Authors:
    Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi
    Academic press:
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (rok: 2022, tom: Volume 259 Issue 10 Article Number 2200183, strony: 45669), Wydawca: WILEY-V C H VERLAG GMBH
    Status:
    Published
    DOI:
    10.1002/pssb.202200183 - link to the publication
  4. Recent progress in basic ammonothermal GaN crystal growth
    Authors:
    K. Grabianska, R. Kucharski, A. Puchalski, T. Sochacki, M. Bockowski
    Academic press:
    Journal of Crystal Growth (rok: 2020, tom: 547, strony: 125804), Wydawca: Elsevier B.V.
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2020.125804 - link to the publication
  5. Growth of bulk GaN crystals
    Authors:
    R Kucharski, T Sochacki, B Lucznik, M Bockowski
    Academic press:
    Journal of Applied Physics (rok: 2020, tom: 128, strony: 50902), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0009900 - link to the publication
  6. Investigation of beryllium diffusion in HVPE-GaN grown in [11-20] and [10-10] crystallographic directions
    Authors:
    Kacper Sierakowski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Pawel Kempisty, Marcin Turek, Michal Bockowski
    Academic press:
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (rok: 2022, tom: 139, strony: 106332), Wydawca: ELSEVIER SCI LTD
    Status:
    Published
    DOI:
    10.1016/j.mssp.2021.106332 - link to the publication
  7. Thermal annealing of GaN implanted with Be
    Authors:
    M. A. Reshchikov, O. Andrieiev, M. Vorobiov, D. Ye, D. O. Demchenko, K. Sierakowski, M. Bockowski, B. McEwen, V. Meyers, and F. Shahedipour-Sandvik
    Academic press:
    JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume131 Issue12 Article Number 125704, strony: 45665), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0080060 - link to the publication
  8. Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
    Authors:
    Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Jun Suda, Shoji Ishibashi, Shigefusa F Chichibu, Tetsu Kachi,,
    Academic press:
    Scientific Reports (rok: 2020, tom: 10, strony: 45664), Wydawca: Nature Research
    Status:
    Published
    DOI:
    10.1038/s41598-020-74362-9 - link to the publication
  9. GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
    Authors:
    Karolina Grabianska, Piotr Jaroszynski, Aneta Sidor, Michal Bockowski, Malgorzata Iwinska,
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1342), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091342 - link to the publication
  10. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
    Authors:
    Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Iwinska Malgorzata, Keita Kataoka, Masahiro Horita, Ikarashi Nobuyuki, Michal Bockowski, Suda Jun, Tetsu Kachi,
    Academic press:
    Applied Physics Express (rok: 2020, tom: 13, strony: 86501), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/aba64b - link to the publication
  11. Investigation of beryllium diffusion in HVPE-GaN grown in [11-20] and [10-10] crystallographic directions
    Authors:
    Kacper Sierakowski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Pawel Kempisty, Marcin Turek, Michal Bockowski
    Academic press:
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (rok: 2022, tom: 139, strony: 106332), Wydawca: ELSEVIER SCI LTD
    Status:
    Published
    DOI:
    10.1016/j.mssp.2021.106332 - link to the publication
  12. Mg-implanted bevel edge termination structure for GaN power device applications
    Authors:
    Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, and Tetsu Kachi
    Academic press:
    Applied Physics Letters (rok: 2021, tom: 118, strony: 093502-1-5), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0039183 - link to the publication
  13. Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration
    Authors:
    Takuya Nakashima, Emi Kano, Keita Kataoka, Shigeo Arai, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Masahiro Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
    Academic press:
    Applied Physics Express (rok: 2021, tom: 14, strony: 011005-1-4), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/abd308 - link to the publication
  14. High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
    Authors:
    M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Yan Guan, Pegah Bagheri, Dennis Szymanski, Seiji Mita, Kacper Sierakowski, Michał Bockowski, Ramon Collazo, and Zlatko Sitar
    Academic press:
    Applied Physics Letters (rok: 2021, tom: 118, strony: 022101-1-6), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0038628 - link to the publication
  15. X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN
    Authors:
    Masamichi Akazawa, Encheng Wu, Hideki Sakurai, Michal Bockowski, Tetsuo Narita, and Tetsu Kachi
    Academic press:
    Japanese Journal of Applied Physics (rok: 2021, tom: 60, strony: 036503-1-8), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1347-4065/abe609 - link to the publication
  16. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
    Authors:
    Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
    Academic press:
    JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume 131 Issue 18 Article Number 185701, strony: 45665), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0087248 - link to the publication
  17. Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
    Authors:
    Kenji Iwata, Hideki Sakurai, Shigeo Arai, Takuya Nakashima, Tetsuo Narita, Keita Kataoka, Michal Bockowski, Masaharu Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
    Academic press:
    Journal of Applied Physics (rok: 2020, tom: 127, strony: 105106-1), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.5142168 - link to the publication
  18. Thermal annealing of GaN implanted with Be
    Authors:
    M. A. Reshchikov, O. Andrieiev, M. Vorobiov, D. Ye, D. O. Demchenko, K. Sierakowski, M. Bockowski, B. McEwen, V. Meyers, and F. Shahedipour-Sandvik
    Academic press:
    JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume131 Issue12 Article Number 125704, strony: 45665), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0080060 - link to the publication
  19. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
    Authors:
    Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Iwinska Malgorzata, Keita Kataoka, Masahiro Horita, Ikarashi Nobuyuki, Michal Bockowski, Suda Jun, Tetsu Kachi,
    Academic press:
    Applied Physics Express (rok: 2020, tom: 13, strony: 86501), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/aba64b - link to the publication
  20. High Pressure Processing of Ion Implanted GaN
    Authors:
    Kacper Sierakowski, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, Michal Bockowski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1380), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091380 - link to the publication
  21. GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
    Authors:
    Karolina Grabianska, Piotr Jaroszynski, Aneta Sidor, Michal Bockowski, Malgorzata Iwinska,
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1342), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091342 - link to the publication
  22. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
    Authors:
    Mikolaj Amilusik , Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki and Michal Bockowski
    Academic press:
    MATERIALS (rok: 2022, tom: Volume 15 Issue 7 Article Number 2379, strony: 45671), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15072379 - link to the publication
  23. Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
    Authors:
    Kachi, Tetsu; Narita, Tetsuo ; Sakurai, Hideki ; Matys, Maciej ; Kataoka, Keita ; Hirukawa, Kazufumi ; Ikarashi, Nobuyuki ; Sierakowski, Kacper ; Bockowski, Michal ; Suda, Jun
    Academic press:
    JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume 132 Issue 13 Article Number 130901, strony: 45671), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0107921 - link to the publication
  24. Investigation of diffusion mechanism of beryllium in GaN
    Authors:
    R. Jakiela, K. Sierakowski, T. Sochacki, M. Iwinska, M. Fijalkowski, A. Barcz, M. Bockowski,
    Academic press:
    Physica B: Physics of Condensed Matter (rok: 2020, tom: 594, strony: 45663), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.physb.2020.412316 - link to the publication
  25. Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
    Authors:
    Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Jun Suda, Shoji Ishibashi, Shigefusa F Chichibu, Tetsu Kachi,,
    Academic press:
    Scientific Reports (rok: 2020, tom: 10, strony: 45664), Wydawca: Nature Research
    Status:
    Published
    DOI:
    10.1038/s41598-020-74362-9 - link to the publication
  26. Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
    Authors:
    Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Kacper Sierakowski, Masahiro Horita, Michal Bockowski, Tetsu Kachi, and Jun Suda
    Academic press:
    Applied Physics Express (rok: 2021, tom: 14, strony: 121004-1-5), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/ac39b0 - link to the publication
  27. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
    Authors:
    H. Sakurai, M. Omori, S. Yamada, Y. Furukawa, H. Suzuki, T. Narita, K. Kataoka, M. Horita, M. Boćkowski, J. Suda, and T. Kachi
    Academic press:
    Applied Physics Letters (rok: 2019, tom: 115, strony: 142104), Wydawca: AMER INST PHYSICS
    Status:
    Published
    DOI:
    10.1063/1.5116866 - link to the publication
  28. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
    Authors:
    Mikolaj Amilusik , Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki and Michal Bockowski
    Academic press:
    MATERIALS (rok: 2022, tom: Volume 15 Issue 7 Article Number 2379, strony: 45671), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15072379 - link to the publication
  29. Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing
    Authors:
    Tetsuo Narita, Hideki Sakurai, Michal Bockowski, Keita Kataoka, Jun Suda, and Tetsu Kachi
    Academic press:
    Applied Physics Express (rok: 2019, tom: 12, strony: 111005), Wydawca: IOP PUBLISHING LTD
    Status:
    Published
    DOI:
    10.7567/1882-0786/ab4934 - link to the publication
  30. Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
    Authors:
    Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Keita Kataoka, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Tomoaki Nishimura, Jun Suda, and Tetsu Kachi
    Academic press:
    Applied Physics Express (rok: 2021, tom: 14, strony: 074002-1-4), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.35848/1882-0786/ac0b09 - link to the publication
  31. Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
    Authors:
    Kachi, Tetsu; Narita, Tetsuo ; Sakurai, Hideki ; Matys, Maciej ; Kataoka, Keita ; Hirukawa, Kazufumi ; Ikarashi, Nobuyuki ; Sierakowski, Kacper ; Bockowski, Michal ; Suda, Jun
    Academic press:
    JOURNAL OF APPLIED PHYSICS (rok: 2022, tom: Volume 132 Issue 13 Article Number 130901, strony: 45671), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0107921 - link to the publication
  32. Progress on and challenges of p-type formation for GaN power devices
    Authors:
    Tetsuo Narita, Hikaru Yoshida, Kazuyoshi Tomita, Keita Kataoka, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Nobuyuki Ikarashi, Jun Suda, Tetsu Kachi, Yutaka Tokuda
    Academic press:
    Journal of Applied Physics (rok: 2020, tom: 128, strony: 90901), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0022198 - link to the publication
  33. Investigation of diffusion mechanism of beryllium in GaN
    Authors:
    R. Jakiela, K. Sierakowski, T. Sochacki, M. Iwinska, M. Fijalkowski, A. Barcz, M. Bockowski,
    Academic press:
    Physica B: Physics of Condensed Matter (rok: 2020, tom: 594, strony: 45663), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.physb.2020.412316 - link to the publication
  34. Recent Progress in Crystal Growth of Bulk GaN
    Authors:
    M. Bockowski and I. Grzegory
    Academic press:
    ACTA PHYSICA POLONICA A (rok: 2022, tom: Volume141 Issue3, strony: 167-174), Wydawca: POLISH ACAD SCIENCES INST PHYSICS
    Status:
    Published
    DOI:
    10.12693/APhysPolA.141.167 - link to the publication
  35. Self-compensation of carbon in HVPE-GaN:C
    Authors:
    R. Piotrzkowski, M. Zajac, E. Litwin-Staszewska, and M. Bockowski
    Academic press:
    Applied Physics Letters (rok: 2020, tom: 117, strony: 12106), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0012844 - link to the publication
  1. Ammonothermal and HVPE Bulk Growth of GaN
    Authors:
    R. Kucharski, T. Sochacki, B. Lucznik, M. Amilusik, K. Grabianska, M. Iwinska, and M. Bockowski
    Book:
    Wide Bandgap Semiconductors for Power Electronics (rok: 2022, tom: II, strony: 531-554), Wydawca: WILEY‐VCH
    Status:
    Published
  2. GaN-Based Materials: Substrates, Metalorganic Vapor Phase Epitaxy and Quantum Well Properties
    Authors:
    F. Scholz, M. Bockowski, and E. Grzanka
    Book:
    Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (rok: 2020, tom: 1, strony: 41-98), Wydawca: WILEY‐VCH
    Status:
    Published

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy