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Gallium nitride doped with beryllium -towards a new generation of light converters.

2011/03/B/ST3/02647

Keywords:

Gallium nitride beryllium deep levels acceptor P-type doping.

Descriptors:

  • ST3_7: Spintronics
  • ST3_5: Physical properties of semiconductors and insulators

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

INSTYTUT FIZYKI PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Henryk Teisseyre 

Number of co-investigators in the project: 8

Call: OPUS 2 - announced on 2011-09-15

Amount awarded: 477 230 PLN

Project start date (Y-m-d): 2012-08-07

Project end date (Y-m-d): 2016-10-06

Project duration:: 50 months (the same as in the proposal)

Project status: Project settled

Information in the final report

  • Publication in academic press/journals (5)
  1. A Monolithic White-Light LED Based on GaN Doped with Be
    Authors:
    Henryk Teisseyre *, Michal Bockowski, Toby David Young, Szymon Grzanka, Yaroslav Zhydachevskii, Izabella Grzegory, Adrian Kozanecki
    Academic press:
    Advances in Science and Technology Vol. 93 (2014) pp 264-269 (rok: 2014, tom: 93, strony: 264), Wydawca: Trans Tech Publications, Switzerland
    Status:
    Published
    DOI:
    10.4028/www.scientific.net/AST.93.264 - link to the publication
  2. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a -Plane GaN Substrates
    Authors:
    Corfdir Pierre, Dussaigne Amélie, Teisseyre Henryk, Suski Tadeusz, Grzegory, Izabella, Lefebvre Pierre, Giraud Etienne, Shahmohammadi Mehran, Phillips Richard, Ganière Jean-Daniel, Grandjean Nicolas, Deveaud Benoît.
    Academic press:
    Japanese Journal of Applied Physics (rok: 2013, tom: 52, strony: 08JC01), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/JJAP.52.08JC01 - link to the publication
  3. A model for Be-related photo-absorption in compensated GaN:Be substrates
    Authors:
    W. R. Willoughby, M. E. Zvanut, J. Dashdorj, and M. Bockowski
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 120, strony: 115701), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4962460 - link to the publication
  4. GaN doped with beryllium—An effective light converter for white light emitting diodes
    Authors:
    Henryk Teisseyre, Michal Bockowski, Izabella Grzegory, Adrian Kozanecki, Benjamin Damilano, Yaroslav Zhydachevskii, Michael Kunzer, Katarzyna Holc, and Ulrich T. Schwarz
    Academic press:
    Applied Physics Letters 103, 011107 (2013) (rok: 2013, tom: 103, strony: 11107), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4812335 - link to the publication
  5. Optical and Magnetic Resonance Studies of Be-doped GaN Bulk Crystals"
    Authors:
    E.R. Glaser, J.A. Freitas, Jr., D.F. Storm, Henryk Teisseyre and Michal Boćkowski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 394, strony: brak), Wydawca: NORTH-HOLLAND
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2014.06.003 - link to the publication

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