Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

2011/01/N/ST3/02345

Keywords:

DLTS LDLTS Raman spectroscopy Admittance Spectroscopy photoluminescence,GaN

Descriptors:

  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Politechnika Wrocławska

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

Paulina Kamyczek 

Number of co-investigators in the project: 2

Call: PRELUDIUM 1 - announced on 2011-03-15

Amount awarded: 94 540 PLN

Project start date (Y-m-d): 2011-12-13

Project end date (Y-m-d): 2014-02-12

Project duration:: 26 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Laptop (2 500 PLN)

Information in the final report

  • Publication in academic press/journals (5)
  1. Deep levels in GaN studied by Deep Level Transient Spectroscopy and Laplace Transform Deep Level Transient Spectroscopy
    Authors:
    P. Kamyczek, E. Placzek-Popko, E. Zielony, Z. R. Zytkiewicz
    Academic press:
    Material Science-Poland (rok: 2013, tom: 31(4), strony: 572-576), Wydawca: wydawnictwo: PWr, we współpracy z Versita i Springer
    Status:
    Published
    DOI:
    10.2478/s13536-013-0138-0 - link to the publication
  2. The Growth and Micro-Raman Characterization of GaN Nanowires
    Authors:
    P. Kamyczek, Z. R. Zytkiewicz, E. Placzek-Popko, E. Zielony, M. Sobanska, K. Klosek, A. Reszka
    Academic press:
    Sensor Letters (rok: 2013, tom: 11, strony: 1555-1559), Wydawca: American Scientific Publishers
    Status:
    Published
    DOI:
    10.1166/sl.2013.2833 - link to the publication
  3. A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN
    Authors:
    P. Kamyczek, E. Placzek-Popko, Vl. Kolkovsky, S. Grzanka, R. Czernecki ,
    Academic press:
    Journal of Applied Physics (rok: 2012, tom: 111, strony: 113105-1), Wydawca: The American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4725484 - link to the publication
  4. Structural and optical characterization of GaN nanowires
    Authors:
    P. Kamyczek, E. Placzek-Popko, Z. R. Zytkiewicz, Z. Gumienny, E. Zielony, M.Sobanska, K. Klosek, A. Reszka
    Academic press:
    Journal of Applied Physics (rok: 2013, tom: 113, strony: 204303-1 - 204303-5), Wydawca: The American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4808097 - link to the publication
  5. Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy
    Authors:
    P. Kamyczek, E. Placzek-Popko, Z. R. Zytkiewicz, E. Zielony, Z. Gumienny
    Academic press:
    Journal of Applied Physics (rok: 2014, tom: 115, strony: 023102-1 - 023102-6), Wydawca: The American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4861180 - link to the publication

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