Projects funded by the NCN
Ohmic contact to p-type Aluminium Gallium Nitride with high aluminium content
2020/37/N/ST7/03947
Keywords:
Ohmic contacts Aluminium Gallium Nitride high aluminium content p-AlGaN
Descriptors:
- ST7_004:
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii
woj. dolnośląskie
Principal investigator (from the host institution):
Katarzyna Karolina Opołczyńska
Number of co-investigators in the project: 3
Call: PRELUDIUM 19 - announced on 2020-03-16
Amount awarded: 139 200 PLN
Project start date (Y-m-d): 2021-02-11
Project end date (Y-m-d): 2023-08-10
Project duration:: 30 months (the same as in the proposal)
Project status: Project settled
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
- Publication in academic press/journals (1)
- Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the InterfaceAuthors:Zdanowicz E., Herman A. P., Opołczyńska K., Gorantla S., Olszewski W., Serafińczuk J., Hommel D., Kudrawiec R.Academic press:ACS Applied Materials & Interfaces (rok: 2022, tom: 14 (4), strony: 6131–6137), Wydawca: ACS Applied Materials & InterfacesStatus:PublishedDOI:10.1021/acsami.1c20352 - link to the publication