Measurements of nonlinear, elastic, piezoelectric, electrostrictive and dielectric constants for bulk gallium nitride
2012/05/B/ST3/02516
Keywords
Descriptors
- ST3_2: Mechaniczne i akustyczne własności materii skondensowanej
- ST3_7: Półprzewodniki
- ST3_6: Dynamika sieci krystalicznych
Panel
ST3 – Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution
Instytut Wysokich Ciśnień PAN
Voivodeship: mazowieckie
Principal investigator (from the host institution)
Number of co-investigators in the project: 5
Call
OPUS 3 – announced on 2012-03-15
- Amount awarded
- 375 460 PLN
- Project start date
- 2013-01-22
- Project end date
- 2016-11-21
- Project duration
- 46 months (the same as in the proposal)
- Project status
- Project settled
Equipment purchased [PL]
- Generator sygnałowy. Cost: 17 000 PLN
- Oscyloskop cyfrowy + 2 sondy 10x.
- Ultratermostat.
- Woltomierz wektorowy. Cost: 28 000 PLN
- Wzmacniacz szerokopasmowy.
Information in the final report
Publication in academic press/journals (7)
-
Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
- Authors:
- P. Witczak, Z. Witczak, R. Jemielniak, M. Kryśko, S. Krukowski, M. Boćkowski
- Academic press:
- Semiconductor Science and Technology (year: 2015, volume: 30, pages: 35008), Publisher: IOP Publishing
- Status:
- Published
- DOI:
- 10.1088/0268-1242/30/3/035008 – link to the publication
-
Challenges and future perspectives in HVPEGaN growth on ammonothermal GaN seeds
- Authors:
- M. Bockowski, M. Iwinska, M. Amilusik, M. Fijalkowski, B. Lucznik and T. Sochacki
- Academic press:
- Semiconductor Science and Technology (year: 2016, volume: 31, pages: 46047), Publisher: IOP Publishing
- Status:
- Published
- DOI:
- 10.1088/0268-1242/31/9/093002 – link to the publication
-
Homoepitaxial growth of HVPE-GaN doped with Si
- Authors:
- M. Iwinska, T.Sochacki, M.Amilusik, P.Kempisty, B.Lucznik, M.Fijalkowski, E. Litwin-Staszewska, J.Smalc-Koziorowska, A.Khapuridze, G.Staszczak, I.Grzegory, M. Bockowski
- Academic press:
- Journal of Crystal Growth (year: 2016, volume: 456, pages: 91-96), Publisher: Elsevier
- Status:
- Published
-
Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction
- Authors:
- P. Witczak, P. Kempisty, P. Strąk, S. Krukowski
- Academic press:
- Journal of Vacuum Science & Technology A (year: 2015, volume: 33, pages: 61101), Publisher: American Vacuum Society
- Status:
- Published
- DOI:
- 10.1116/1.4927166 – link to the publication
-
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
- Authors:
- J.Z. Domagala, J.Smalc-Koziorowska, M.Iwinska, T.Sochacki, M.Amilusik, B. Lucznik, M.Fijalkowski, G.Kamler, I.Grzegory, R.Kucharski, M.Zajac, M. Bockowski
- Academic press:
- Journal of Crystal Growth (year: 2016, volume: 456, pages: 80-85), Publisher: Elsevier
- Status:
- Published
-
Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results
- Authors:
- B. Lucznik, M.Iwinska, T.Sochacki, M.Amilusik, M.Fijalkowski, I.Grzegory, M.Bockowski
- Academic press:
- Journal of Crystal Growth (year: 2016, volume: 456, pages: 86-90), Publisher: Elsevier
- Status:
- Published
-
Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds
- Authors:
- M. Iwinska, R. Piotrzkowski, E. Litwin-Staszewska, T. Sochacki, M. Amilusik, M. Fijalkowski, B. Lucznik, and M.Bockowski
- Academic press:
- Applied Physics Express (year: 2017, volume: 10, pages: 011003-1 - 011003-4), Publisher: The Japan Society of Applied Physics
- Status:
- Published