Projects funded by the NCN
Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in metal/Al203/AlGaN/GaN structure by the photocapacitance versus excitation light intensity measurement.
2012/07/N/ST7/03336
Keywords:
aluminium compounds gallium compounds III-V semiconductors interface states MIS structures photocapacitance valence band wide band gap semiconductors
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne
woj. śląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 4 - announced on 2012-09-15
Amount awarded: 49 000 PLN
Project start date (Y-m-d): 2013-09-26
Project end date (Y-m-d): 2014-09-25
Project duration:: 12 months (the same as in the proposal)
Project status: Project settled
Information in the final report
- Publication in academic press/journals (1)
- Articles in post-conference publications (1)
- Book publications / chapters in book publications (1)
- Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/ AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistorsAuthors:M. Matys, S. Kaneki, K. Nishiguchi, B. Adamowicz, and T. HashizumeAcademic press:Journal of Applied Physics (rok: 2017, tom: 122, strony: 224504-1 - 224504-7), Wydawca: American Institute of PhysicsStatus:PublishedDOI:10.1063/1.5000497 - link to the publication
- Characterization of donor-like states at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN structuresAuthors:M. Matys, B. Adamowicz, Y. Hori, T. HashizumeConference:15th Int. Conference on Defects Recognition, Imaging and Physics in Semiconductors, Warsaw (rok: 2013, ), Wydawca: Institute of Electron Technology, WarsawData:konferencja September 15 – 19Status:Published
- Przewodnik pracy doktorskiejAuthors:Maciej MatysBook:Contributions to the Understanding of Electronic Properties of Aluminium Oxide/(Al,Ga)N Interface (rok: 2014, tom: 1, strony: 12420), Wydawca: Uniwersytet Śląski, Instytut Fizyki im. Augusta ChełkowskiegoStatus:Published