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1. Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high…

Principal investigator: Monika Masłyk

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 16, Panel: ST7

2. Position of Fermi level on GaN surface and electric field distribution in AlGaN/GaN heterostructures grown on GaN substr…

Principal investigator: dr hab. Robert Henryk Kudrawiec

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Call: OPUS 2, Panel: ST3

3. Structural factors (morphology of GaN nano-structure, metallic layer thickness, grain size and distribution, composition…

Principal investigator: dr hab. Jan Leszek Weyher

Instytut Wysokich Ciśnień PAN

Call: OPUS 1, Panel: ST8

4. Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

Principal investigator: dr hab. Izabella Alicja Grzegory

Instytut Wysokich Ciśnień PAN

Call: OPUS 12, Panel: ST5

5. Strain-relaxed superlattices on porous GaN for high-performance and superior wavelength stability red microLEDs.

Principal investigator: dr Grzegorz Tomasz Staszczak

Instytut Wysokich Ciśnień PAN

Call: OPUS 29, Panel: ST7

6. Hybrid photovoltaic detectors based on the van der Waals/(Al)GaN junction

Principal investigator: prof. Robert Henryk Kudrawiec

Politechnika Wrocławska

Call: OPUS 23, Panel: ST7

7. As-induced VLS-MBE growth of dodecagonal GaN microrods

Principal investigator: Paulina Ada Ciechanowicz

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: PRELUDIUM 19, Panel: ST5

8. Nanoporous GaN - a new platform for realization of quantum structures

Principal investigator: dr Marta Łucja Sawicka

Instytut Wysokich Ciśnień PAN

Call: SONATA 15, Panel: ST5

9. Mechanisms of Schottky barrier formation and phenomena occuring at high temperatures in GaN-on-Si epitaxial structures w…

Principal investigator: dr Marek Wzorek

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

Call: SONATA 14, Panel: ST7

10. Application of electron diffraction RHEED and mass spectroscopy QMS for in-situ analysis of nucleation and MBE growth of…

Principal investigator: dr Marta Maria Sobańska

Instytut Fizyki PAN

Call: PRELUDIUM 11, Panel: ST3

11. Elaboration of manufacturing technology of SERS platforms on functionalized by etching GaN substrates as sensors for exa…

Principal investigator: dr hab. Jan Weyher

Instytut Wysokich Ciśnień PAN

Call: OPUS 10, Panel: ST8

12. GaN nanostructures genereted in selective ICP etching process, initied by titanium thin film

Principal investigator: Marek Ekielski

Instytut Technologii Elektronowej

Call: PRELUDIUM 6, Panel: ST7

13. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska

Call: PRELUDIUM 1, Panel: ST3

14. GNOMES – GaN Nanowires with Oxide shells: Modification and Enhancement by Surface engineering

Principal investigator: Radosław Szymon

Politechnika Wrocławska

Call: PRELUDIUM 24, Panel: ST11

15. Surface functionalization of p-(Al)GaN with MXenes – contact engineering for efficient deep UV emitters

Principal investigator: dr Dominika Marianna Majchrzak

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: SONATINA 9, Panel: ST11

16. Seizing the advantages of Nitrogen-polar GaN for III-nitride light emitters

Principal investigator: dr hab. Henryk Maciej Turski

Instytut Wysokich Ciśnień PAN

Call: SONATA 17, Panel: ST3

17. The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc…

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień PAN

Call: SONATA 16, Panel: ST5

18. Radiative and non-radiative carbon and vacancy-related defects in GaN.

Principal investigator: dr Piotr Kruszewski

Instytut Wysokich Ciśnień PAN

Call: OPUS 19, Panel: ST5

19. Impurity 3D diffusion in GaN - mechanism and the role of defects

Principal investigator: prof. Andrzej Wiesław Turos

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

Call: OPUS 17, Panel: ST5

20. Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 15, Panel: ST5

21. GaN nanowires for new architecture of optoelectronic devices and sensors.

Principal investigator: prof. Zbigniew Ryszard Żytkiewicz

Instytut Fizyki PAN

Call: OPUS 12, Panel: ST7

22. Ferromagnetic stability of spin interaction between local magnetic centers in GaN, BN, SiC and ZnO: GGA+U studies with t…

Principal investigator: dr Oksana Volnianska

Instytut Fizyki PAN

Call: SONATA 9, Panel: ST3

23. GaN- and GaAs-based monolithic Vertical-Cavity Surface-Emitting Lasers

Principal investigator: dr hab. Tomasz Czyszanowski

Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

Call: OPUS 8, Panel: ST7

24. Properties of InGaN waveguides and a model of leakage of optical modes to GaN substrate in laser diodes

Principal investigator: Grzegorz Muzioł

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 6, Panel: ST7

25. Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec…

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

Call: OPUS 6, Panel: ST3

26. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing …

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 5, Panel: ST5

27. Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-1…

Principal investigator: dr Marta Łucja Sawicka

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 2, Panel: ST3

28. Tunnel-junctions and highly resistive layers in GaN-based heterostructures

Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

Politechnika Wrocławska

Call: OPUS 11, Panel: ST7

29. Construction and optimisation of nitride and tandem nitride-perovskite solar cells

Principal investigator: dr hab. Julita Wiktoria Smalc-Koziorowska

Instytut Wysokich Ciśnień PAN

Call: SONATA BIS 15, Panel: ST11

30. Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications

Principal investigator: dr Artur Paweł Lachowski

Instytut Wysokich Ciśnień PAN

Call: SONATINA 9, Panel: ST5

31. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Principal investigator: prof. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 25, Panel: ST5

32. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

Principal investigator: Wojciech Tomasz Olszewski

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: PRELUDIUM 21, Panel: ST5

33. Spectroscopic investigation of electronic phenomena at the lead-free perovskite/GaN interface

Principal investigator: Ewelina Anna Zdanowicz

Politechnika Wrocławska

Call: PRELUDIUM 21, Panel: ST3

34. Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 20, Panel: ST5

35. Thin films of transition metal dichalcogenides. The influence of the substrate on the MoTe2 structure, morphology and ma…

Principal investigator: Zuzanna Wiktoria Ogorzałek-Sory

Uniwersytet Warszawski, Wydział Fizyki

Call: PRELUDIUM 20, Panel: ST5

36. Metal vacancies, their complexes and clusters in nitride semiconductors.

Principal investigator: dr Robert Filip Czernecki

Instytut Wysokich Ciśnień PAN

Call: WEAVE-UNISONO, Panel: ST5

37. Deep generative models for 3D representations

Principal investigator: dr Maciej Mateusz Zięba

Politechnika Wrocławska

Call: OPUS 19, Panel: ST6

38. Transparent electrical contacts for III-N structures based on van der Waals crystals

Principal investigator: prof. Robert Henryk Kudrawiec

Politechnika Wrocławska

Call: OPUS 15, Panel: ST7

39. Modulation spectroscopy of novel nitride semiconductor structures in ultraviolet spectral range

Principal investigator: dr Magdalena Violetta Latkowska-Baranowska

Politechnika Wrocławska

Call: SONATA 9, Panel: ST7

40. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 1, Panel: ST5

41. Studies of population inversion and optical gain of yellow and red light in rare earth doped silicate crystals optically…

Principal investigator: prof. Witold Ryba-Romanowski

Instytut Niskich Temperatur i Badań Strukturalnych im. Włodzimierza Trzebiatowskiego PAN

Call: OPUS 1, Panel: ST7

42. Tracking ALICE - Fast Simulation based on Machine Learning Methods for the ALICE CERN

Principal investigator: Kamil Rafał Deja

Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

Call: PRELUDIUM 16, Panel: ST6

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