Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Properties of InGaN waveguides and a model of leakage of optical modes to GaN substrate in laser diodes

2013/11/N/ST7/02788

Keywords:

InGaN waveguide laser diodes

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST3_12: Molecular electronics

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

Grzegorz Muzioł 

Number of co-investigators in the project: 2

Call: PRELUDIUM 6 - announced on 2013-09-16

Amount awarded: 149 988 PLN

Project start date (Y-m-d): 2014-07-15

Project end date (Y-m-d): 2017-07-14

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Kamera CCD (4 800 PLN)
  2. Komputer do sterowania układu pomiarowego pola dalekiego.

Information in the final report

  • Publication in academic press/journals (4)
  • Book publications / chapters in book publications (1)
  1. Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide
    Authors:
    Grzegorz Muziol, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Piotr Perlin, and Czesław Skierbiszewski
    Academic press:
    Applied Physics Express (rok: 2016, tom: 9, strony: 0921031-0921034), Wydawca: IOP Publishing (UK)
    Status:
    Published
    DOI:
    10.7567/APEX.9.092103 - link to the publication
  2. Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy
    Authors:
    Grzegorz Muziol, Henryk Turski, Marcin Siekacz, Pawel Wolny, Szymon Grzanka, Ewa Grzanka, Piotr Perlin and Czeslaw Skierbiszewski
    Academic press:
    Applied Physics Express (rok: 2015, tom: 8, strony: 0321031-0321034), Wydawca: IOP Publishing (UK)
    Status:
    Published
    DOI:
    10.7567/APEX.8.032103 - link to the publication
  3. Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties
    Authors:
    G. MUZIOL, H. TURSKI, M. SIEKACZ, P. WOLNY, J. BORYSIUK, S. GRZANKA, PERLIN AND C. SKIERBISZEWSKI
    Academic press:
    Optics Express (rok: 2017, tom: 25, strony: 33113-33121), Wydawca: The Optical Society (United States)
    Status:
    Published
    DOI:
    10.1364/OE.25.033113 - link to the publication
  4. High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Siekacz, H. Turski, P. Wolny, S. Grzanka, E. Grzanka, A. Feduniewicz-Żmuda, J. Borysiuk, K. Sobczak, J. Domagała, A. Nowakowska-Siwińska, I. Makarowa, P. Perlin , C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2015, tom: 425, strony: 398-400), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2015.02.067 - link to the publication
  1. InGaN Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
    Authors:
    C. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz, M. Sawicka
    Book:
    Handbook of Solid-State Lighting and LEDs (rok: 2017, tom: 1, strony: 321-360), Wydawca: CRC Press, Taylor & Francis Group
    Status:
    Published