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Information of the project and the call

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Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-10) and semipolar (20-21) surfaces

2011/03/N/ST3/02950

Keywords:

plasma assisted molecular beam epitaxy PAMBE m-plane (10-10) semipolar (20-21) miscut AFM PL XRD TEM polarized light emission piezoelectric fields structural defects

Descriptors:

  • ST3_7: Spintronics
  • ST3_1: Structure of solids, material growth and characterisation

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Marta Sawicka 

Number of co-investigators in the project: 3

Call: PRELUDIUM 2 - announced on 2011-09-15

Amount awarded: 281 730 PLN

Project start date (Y-m-d): 2012-08-20

Project end date (Y-m-d): 2016-11-19

Project duration:: 51 months (the same as in the proposal)

Project status: Project settled

Information in the final report

  • Publication in academic press/journals (8)
  • Book publications / chapters in book publications (1)
  1. Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m -plane GaN surfaces to vacuum and air ambient
    Authors:
    Ł. Janicki, M. Ramírez-López, J. Misiewicz, G. Cywiński, M. Boćkowski, G. Muzioł, C. Chèze, M. Sawicka, C. Skierbiszewski, R. Kudrawiec
    Academic press:
    Japanese Journal of Applied Physics (rok: 2016, tom: 55, strony: 05FA08-4), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/JJAP.55.05FA08 - link to the publication
  2. Surface potential barrier in m -plane GaN studied by contactless electroreflectance
    Authors:
    L. Janicki , J. Misiewicz, G. Cywinski 2 , M. Sawicka, C. Skierbiszewski, R. Kudrawiec
    Academic press:
    Applied Physics Express (rok: 2016, tom: 9, strony: 021002-4), Wydawca: Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/APEX.9.021002 - link to the publication
  3. Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy
    Authors:
    M. Sawicka, P. Wolny, M. Kryśko, H. Turski, K. Szkudlarek, S. Grzanka, C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2017, tom: 465, strony: 43-47), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2017.02.045 - link to the publication
  4. Growth mechanisms in semipolar (20-21) and nonpolar m plane (10-10) AlGaN/GaN structures grown by PAMBE under N-rich conditions
    Authors:
    M. Sawicka, C. Chèze, H. Turski, J. Smalc-Koziorowska, M. Kryśko, S. Kret, T. Remmele, M. Albrecht, G. Cywiński, I. Grzegory, C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2013, tom: 377, strony: 184-191), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2013.04.045 - link to the publication
  5. Ultraviolet laser diodes grown on semipolar (20-21) GaN substrates by plasma-assisted molecular beam epitaxy
    Authors:
    M. Sawicka, G. Muziol, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J. L. Weyher, C. Cheze, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski
    Academic press:
    Applied Physics Letters (rok: 2013, tom: 102, strony: 251101-4), Wydawca: AIP Publishing LLC
    Status:
    Published
    DOI:
    10.1063/1.4812201 - link to the publication
  6. Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy
    Authors:
    M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2017, tom: 459C, strony: 129-134), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2016.11.105 - link to the publication
  7. Strain relaxation in semipolar (20-21) InGaN grown by plasma assisted molecular beam epitaxy
    Authors:
    M. Sawicka, M. Krysko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 119, strony: 185701-9), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4948963 - link to the publication
  8. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20-21) substrates
    Authors:
    M. Sawicka, C. Cheze, H. Turski, G. Muziol, S. Grzanka, C. Hauswald, O. Brandt, M. Siekacz, R. Kucharski, T. Remmele, M. Albrecht, M. Krysko, E. Grzanka, T. Sochacki, C. Skierbiszewski
    Academic press:
    Applied Physics Letters (rok: 2013, tom: 102, strony: 111107-4), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4796123 - link to the publication
  1. InGaN laser diodes grown by Plasma Assisted Molecular Beam Epitaxy
    Authors:
    C. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz, M. Sawicka
    Book:
    Handbook of Solid-State Lighting and LEDs (rok: 2017, tom: 1, strony: 321-360), Wydawca: Taylor & Francis/CRC press
    Status:
    Published
    DOI:
    link to the publication

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