Projects funded by the NCN
Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-10) and semipolar (20-21) surfaces
2011/03/N/ST3/02950
Keywords:
plasma assisted molecular beam epitaxy PAMBE m-plane (10-10) semipolar (20-21) miscut AFM PL XRD TEM polarized light emission piezoelectric fields structural defects
Descriptors:
- ST3_7: Spintronics
- ST3_1: Structure of solids, material growth and characterisation
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 2 - announced on 2011-09-15
Amount awarded: 281 730 PLN
Project start date (Y-m-d): 2012-08-20
Project end date (Y-m-d): 2016-11-19
Project duration:: 51 months (the same as in the proposal)
Project status: Project settled