Mechanisms of Schottky barrier formation and phenomena occuring at high temperatures in GaN-on-Si epitaxial structures with metal silicide contacts

2018/31/D/ST7/02901

Keywords

Descriptors

  • ST7_5: Mikro- i nanoelektronika, optoelektronika

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Marek Wzorek

Number of co-investigators in the project: 5

Call

SONATA 14 – announced on 2018-09-14

Amount awarded
997 600 PLN
Project start date
2019-07-11
Project end date
2023-07-10
Project duration
48 months (the same as in the proposal)
Project status
Project settled

Project description

Download the project description in a pdf file

Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

Publication in academic press/journals (3)

  1. Electrical Properties of Cu/Pd2Si Schottky Contacts to AlGaN/GaN-on-Si HEMT Heterostructures

    Authors:
    M. Wzorek, M. Ekielski, E. Brzozowski, A. Taube
    Academic press:
    Materials Science in Semiconductor Processing (year: 2023, volume: 153, pages: 107157), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mssp.2022.107157 – link to the publication
  2. Photoelectric, optical and microstructural characterization of thin palladium silicide (Pd2Si) layers fabricated by magnetron sputtering from a stoichiometric target

    Authors:
    K. Piskorski, M. Wzorek, M. Ekielski, L. Dobrzański, J. Gaca, A. Malinowska, P. Michałowski, M.A. Borysiewicz
    Academic press:
    Materials Science and Engineering B (year: 2022, volume: 283, pages: 115831), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mseb.2022.115831 – link to the publication
  3. Thermal stability of Cu/Pd2Si/, Cu/ and Au/Ni/ Schottky contacts to AlGaN/GaN heterostructures

    Authors:
    Marek Wzorek, Marek Ekielski, Jarosław Tarenko, Michał A. Borysiewicz, Ernest Brzozowski, Andrzej Taube
    Academic press:
    IEEE Transactions on Electron Devices (year: 2024, volume: 71, pages: 490-495), Publisher: IEEE Electron Devices Society
    Status:
    Published
    DOI:
    10.1109/TED.2023.3337752 – link to the publication

« New search

Graphic design and implementation: Jakub Piotrowski