Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Transparent electrical contacts for III-N structures based on van der Waals crystals

2018/29/B/ST7/02135

Keywords:

GaN van der Waals photoreflectance electroreflectance electric field Fermi level

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Wrocławska

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Robert Kudrawiec 

Number of co-investigators in the project: 5

Call: OPUS 15 - announced on 2018-03-15

Amount awarded: 1 491 400 PLN

Project start date (Y-m-d): 2019-01-31

Project end date (Y-m-d): 2022-01-30

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Laser.
  2. Reduktor.
  3. Supercontinuum (80 000 PLN)
  4. Komora rękawicowa (170 000 PLN)
  5. Monochromator (2 szt.) (90 000 PLN)
  6. Komora laminarna (9 000 PLN)

Information in the final report

  • Publication in academic press/journals (4)
  1. Geometric progress in the thickness of exfoliated van der Waals crystals on the example of MoS2
    Authors:
    Magdalena Tamulewicz-Szwajkowska, Szymon J. Zelewski, Jarosław Serafinczuk, and Robert Kudrawiec
    Academic press:
    AIP Advances (rok: 2022, tom: 12, strony: 25328), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/5.0082670 - link to the publication
  2. Determination of Fermi Level Position at the Graphene/GaN Interface Using Electromodulation Spectroscopy
    Authors:
    A. P. Herman, L. Janicki, H. S. Stokowski, M. Rudzinski, E. Rozbiegala, M. Sobanska, Z. R. Zytkiewicz, and R. Kudrawiec
    Academic press:
    Advanced Materials Interfaces (rok: 2020, tom: NA, strony: 2001220), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/admi.202001220 - link to the publication
  3. Toward h‑BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface
    Authors:
    E. Zdanowicz, A. P. Herman, K. Opołczyńska, S. Gorantla, W. Olszewski, J. Serafińczuk, D. Hommel, and R. Kudrawiec
    Academic press:
    ACS Applied Materials & Interfaces (rok: 2022, tom: 14, strony: 6131−6137), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acsami.1c20352 - link to the publication
  4. The influence of the photovoltaic effect on the surface electric field in GaN
    Authors:
    Ewelina Zdanowicz, Artur P. Herman , Robert Kudrawiec
    Academic press:
    Applied Surface Science (rok: 2022, tom: 577, strony: 151905), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.apsusc.2021.151905 - link to the publication

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy