Projects funded by the NCN
Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with highly doped subcontact n-GaN:O layer to n-GaN and AlGaN/GaN HEMT transistors
2018/31/N/ST7/03624
Keywords:
GaN oxygen magnetron sputtering doping ohmic contact HEMT
Descriptors:
- ST3_7: Spintronics
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 16 - announced on 2018-09-14
Amount awarded: 186 700 PLN
Project start date (Y-m-d): 2019-07-12
Project end date (Y-m-d): 2023-02-11
Project duration:: 43 months (the same as in the proposal)
Project status: Project settled
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
- Publication in academic press/journals (1)
- Ohmic contact to n-GaN using rt-sputtered GaN:OAuthors:Monika Masłyk, Paweł Prystawko, Eliana Kamińska, Ewa Grzanka, Marcin KryśkoAcademic press:Materials (rok: 2023, tom: 16, strony: 9), Wydawca: MDPIStatus:PublishedDOI:10.3390/ma16165574 - link to the publication