Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Position of Fermi level on GaN surface and electric field distribution in AlGaN/GaN heterostructures grown on GaN substrates of various crystallographic orientations

2011/03/B/ST3/02633

Keywords:

GaN built-in electric field spontaneous and piezoelectric polarization Fermi level modulation spectroscopy

Descriptors:

  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Robert Kudrawiec 

Number of co-investigators in the project: 9

Call: OPUS 2 - announced on 2011-09-15

Amount awarded: 599 200 PLN

Project start date (Y-m-d): 2012-08-07

Project end date (Y-m-d): 2015-08-06

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Nanowoltomierz fazoczuły (45 000 PLN)
  2. Laser diodowy o długości fali 405 nm.
  3. Laser UV (120 000 PLN)

Information in the final report

  • Publication in academic press/journals (9)
  • Book publications / chapters in book publications (1)
  1. Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures
    Authors:
    M. Gladysiewicz, R. Kudrawiec, J. Misiewicz, K. Klosek, M. Sobanska, J. Borysiuk, and Z. R. Zytkiewicz
    Academic press:
    Journal of Applied Physics (rok: 2013, tom: 114, strony: 163527), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4827376 - link to the publication
  2. Position of Fermi level on AlGaN surface and distribution of electric field in AlGaN/GaN heterostructures without and with AlN layer
    Authors:
    M. Gladysiewicz, L. Janicki, R. Kudrawiec, J. Misiewicz, M. Wosko, R. Paszkiewicz, B. Paszkiewicz, and M. Tłaczała
    Academic press:
    Journal of Applied Physics (rok: 2014, tom: 115, strony: 133504), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1186/1556-276X-9-81 - link to the publication
  3. Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures: The Issue of Polar Surface Quantum Well
    Authors:
    M. Gladysiewicz and R. Kudrawiec
    Academic press:
    Japanese Journal of Physics (rok: 2013, tom: 52, strony: 08JL05), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/JJAP.52.08JL05 - link to the publication
  4. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
    Authors:
    R. Kudrawiec, L. Janicki, M. Gladysiewicz, J. Misiewicz, G. Cywinski, M. Bockowski, G. Muzioł, C. Cheze, M. Sawicka, and C. Skierbiszewski
    Academic press:
    Applied Physics Letters (rok: 2013, tom: 103, strony: 52107), Wydawca: Institute of Applied Physics
    Status:
    Published
    DOI:
    10.1063/1.4817296 - link to the publication
  5. Surface potential barrier at m-plane GaN studied by contactless electroreflectance
    Authors:
    Ł. Janicki, J. Misiewicz, G. Cywiński, M. Sawicka, C. Skierbiszewski, and R. Kudrawiec
    Academic press:
    Applied Physics Express (rok: 2016, tom: 9, strony: 21002), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/APEX.9.021002 - link to the publication
  6. Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
    Authors:
    G. Cywinski, R. Kudrawiec, Ł. Janicki, J. Misiewicz, C. Cheze, M. Siekacz, and M. Sawicka, P. Wolny, M. Bockowski, and Cz. Skierbiszewski
    Academic press:
    Journal of Vacuum Science and Technology B (rok: 2013, tom: 31(3), strony: 03C112), Wydawca: AVS
    Status:
    Published
    DOI:
    10.1116/1.4793765 - link to the publication
  7. Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures
    Authors:
    M. Gladysiewicz, L. Janicki, M. Siekacz, G. Cywinski, C. Skierbiszewski, and R. Kudrawiec
    Academic press:
    Applied Physics Letters (rok: 2015, tom: 107, strony: 262107), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4939146 - link to the publication
  8. Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures by thickness of GaN(cap) and AlGaN layer: theoretical and experimental studies
    Authors:
    M. Gladysiewicz, L. Janicki, J. Misiewicz, K. Klosek, M. Sobanska, Z.R. Zytkiewicz, and R. Kudrawiec
    Academic press:
    Journal of Physics D (rok: 2016, tom: 49, strony: 345106), Wydawca: Institute of Physics Publising
    Status:
    Published
    DOI:
    10.1088/0022-3727/49/34/345106 - link to the publication
  9. Contactless electroreflectance studies of surface potential barrier in AlGaN/n-AlGaN structures with various Al concentrations
    Authors:
    Ł. Janicki, R. Kudrawiec, K. Pakuła, R. Stępniewski and J. Misiewicz
    Academic press:
    Physica Status Solidi (b) (rok: 2015, tom: 45296, strony: xxx), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/pssb.201451598 - link to the publication
  1. Doktorat
    Authors:
    Ł. Janicki
    Book:
    Badanie rozkładu pól elektrycznych w strukturach półprzewodnikowych na bazie związków III-N (rok: 2015, tom: Doktorat, strony: 1-107), Wydawca: Wydział Podstawowych problemów Techniki, Politechnika Wrocławska
    Status:
    Published