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1. Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride

Principal investigator: dr Mikołaj Bazyli Amilusik

Instytut Wysokich Ciśnień PAN

Call: SONATA 20, Panel: ST5

2. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Principal investigator: prof. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 25, Panel: ST5

3. Crystallization from vapor phase of bulk gallium nitride doped with germanium

Principal investigator: Kacper Paweł Sierakowski

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 20, Panel: ST5

4. Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 20, Panel: ST5

5. Point defects in ammonothermal gallium nitride

Principal investigator: dr Marcin Zając

Instytut Wysokich Ciśnień PAN

Call: OPUS 19, Panel: ST5

6. Crystallization from vapor phase of highly resistive bulk gallium nitride doped with manganese.

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 13, Panel: ST5

7. Tunnel-junctions and highly resistive layers in GaN-based heterostructures

Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

Politechnika Wrocławska

Call: OPUS 11, Panel: ST7

8. The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduc…

Principal investigator: dr Szymon Grzanka

Instytut Wysokich Ciśnień PAN

Call: SONATA 8, Panel: ST7

9. Measurements of nonlinear, elastic, piezoelectric, electrostrictive and dielectric constants for bulk gallium nitride

Principal investigator: dr Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 3, Panel: ST3

10. Influence of the direction of crystallization front on the mechanisms of formation of magnesium impurity centers in gall…

Principal investigator: Bogdan Sadovyi

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 3, Panel: ST3

11. Analysis of thermal processes in diode lasers based on gallium nitride by thermoreflectance spectroscopy

Principal investigator: dr Dorota Iwona Pierścińska

Instytut Technologii Elektronowej

Call: SONATA 2, Panel: ST7

12. Gallium nitride doped with beryllium -towards a new generation of light converters.

Principal investigator: dr hab. Henryk Teisseyre

Instytut Fizyki PAN

Call: OPUS 2, Panel: ST3

13. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 1, Panel: ST5

14. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

Principal investigator: Wojciech Tomasz Olszewski

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Call: PRELUDIUM 21, Panel: ST5

15. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska

Call: PRELUDIUM 1, Panel: ST3

16. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing …

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 5, Panel: ST5

17. GNOMES – GaN Nanowires with Oxide shells: Modification and Enhancement by Surface engineering

Principal investigator: Radosław Szymon

Politechnika Wrocławska

Call: PRELUDIUM 24, Panel: ST11

18. Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation

Principal investigator: dr Grzegorz Muzioł

Instytut Wysokich Ciśnień PAN

Call: OPUS 26 (LAP), Panel: ST7

19. Bidirectional light-emitting diodes for alternating current operation

Principal investigator: Mikołaj Józef Żak

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 22, Panel: ST7

20. Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu…

Principal investigator: dr Grzegorz Tomasz Staszczak

Instytut Wysokich Ciśnień PAN

Call: OPUS 21, Panel: ST7

21. Nanoporous GaN - a new platform for realization of quantum structures

Principal investigator: dr Marta Łucja Sawicka

Instytut Wysokich Ciśnień PAN

Call: SONATA 15, Panel: ST5

22. Influence of build-in piezoelectric fields on performance of nitride laser diodes

Principal investigator: Mateusz Jakub Hajdel

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 18, Panel: ST7

23. Impurity 3D diffusion in GaN - mechanism and the role of defects

Principal investigator: prof. Andrzej Wiesław Turos

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

Call: OPUS 17, Panel: ST5

24. Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 15, Panel: ST5

25. Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

Principal investigator: dr hab. Izabella Alicja Grzegory

Instytut Wysokich Ciśnień PAN

Call: OPUS 12, Panel: ST5

26. The study of dynamics of spatially separated carriers in group III-N materials and structures

Principal investigator: Łukasz Krzysztof Janicki

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Call: PRELUDIUM 8, Panel: ST7

27. Nitride superluminescent diodes with broadened gain spectrum

Principal investigator: Anna Wanda Kafar

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 6, Panel: ST7

28. Multiscale modelling of polar and non polar planes of wurtzite structure crystals with disorientation during growth and …

Principal investigator: dr Filip Krzyżewski

Instytut Fizyki PAN

Call: SONATA 6, Panel: ST3

29. Growth and composition optimization of dielectric layers for n-i-p structure applications

Principal investigator: dr Sylwia Aldona Gierałtowska

Instytut Fizyki PAN

Call: PRELUDIUM 5, Panel: ST5

30. Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in meta…

Principal investigator: Maciej Franciszek Matys

Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne

Call: PRELUDIUM 4, Panel: ST7

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