Projects funded by the NCN

Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec...

Call: OPUS 6 , Panel: ST3

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

From strained alloys to superlattices - electronic and optical properties of nitride quantum structures

Call: OPUS 1 , Panel: ST3

Principal investigator: dr hab. Izabela Gorczyca

Instytut Wysokich Ciśnień PAN

Determination of the energetic distribution of interface states density at the insulator/semiconductor interface in meta...

Call: PRELUDIUM 4 , Panel: ST7

Principal investigator: Maciej Matys

Politechnika Śląska, Instytut Fizyki - Centrum Naukowo-Dydaktyczne

Study of phenomena at the metal-semiconductor interface in semiconductor devices based on AlGaN/GaN heterostructures

Call: SONATA 4 , Panel: ST7

Principal investigator: dr Wojciech Macherzyński

Politechnika Wrocławska, Wydział Elektroniki Mikrosystemów i Fotoniki

Position of Fermi level on GaN surface and electric field distribution in AlGaN/GaN heterostructures grown on GaN substr...

Call: OPUS 2 , Panel: ST3

Principal investigator: dr hab. Robert Kudrawiec

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-1...

Call: PRELUDIUM 2 , Panel: ST3

Principal investigator: dr Marta Sawicka

Instytut Wysokich Ciśnień PAN

Physics of GaN/AlGaN nanowire surfaces – towards more efficient nano-LEDs

Call: OPUS 23 , Panel: ST5

Principal investigator: prof. Bogdan Kowalski

Instytut Fizyki Polskiej Akademii Nauk

Efficient UV light emitters and detectors based on GaN/AlGaN nanowire arrays with buried mirror and bottom metallic elec...

Call: SONATA 17 , Panel: ST7

Principal investigator: dr Marta Sobańska

Instytut Fizyki Polskiej Akademii Nauk

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

Call: SONATA 16 , Panel: ST5

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Terahertz plasma resonance in the grating-gate and fin-shaped channel AlGaN/GaN structures

Call: PRELUDIUM 18 , Panel: ST7

Principal investigator: Pavlo Sai

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high...

Call: PRELUDIUM 16 , Panel: ST7

Principal investigator: Monika Masłyk

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

In situ Characterization of MOVPE Growth Dynamics and of Diffusion Mechanisms in Nitrides and Their Influence on Optoele...

Call: BEETHOVEN 3 , Panel: ST5

Principal investigator: prof. Michał Leszczyński

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Terahertz Plasma Wave Instabilities in GaN/AlGaN Nanowires

Call: DAINA 1 , Panel: ST7

Principal investigator: dr Maciej Sakowicz

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structure...

Call: SONATA BIS 6 , Panel: ST7

Principal investigator: dr hab. Grzegorz Cywiński

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/Ga...

Call: SONATA 10 , Panel: ST7

Principal investigator: dr Karolina Pągowska

Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Elektronowej