In situ Characterization of MOVPE Growth Dynamics and of Diffusion Mechanisms in Nitrides and Their Influence on Optoelectronic Properties of InGaN/AlGaN/GaN Quantum Structures
2018/31/G/ST5/03765
Keywords
Descriptors
- ST5_1: Właściwości strukturalne materiałów
- ST5_4: Cienkie warstwy
Panel
ST5 – Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution
Instytut Wysokich Ciśnień PAN
Voivodeship: mazowieckie
Principal investigator (from the host institution)
prof. Michał Jerzy Leszczyński
Number of co-investigators in the project: 7
Call
BEETHOVEN 3 – announced on 2018-09-14
- Amount awarded
- 1 431 847 PLN
- Project start date
- 2020-01-15
- Project end date
- 2025-01-14
- Project duration
- 60 months (the same as in the proposal)
- Project status
- Project settled
Project description
Download the project description in a pdf file
Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
Publication in academic press/journals (3)
-
Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers
- Authors:
- Artur Lachowski, Ewa Grzanka, Szymon Grzanka, Robert Czernecki, Mikołaj Grabowski, Roman Hrytsak, Grzegorz Nowak, Mike Leszczyński, Julita Smalc-Koziorowska
- Academic press:
- Journal of Alloys and Compounds (year: 2022, volume: 900, pages: 163519), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.jallcom.2021.163519 – link to the publication
-
In-situ X-ray study during a thermal cycle treatment in combi-nation with complementary ex-situ investigation of InGaN Quantum Wells
- Authors:
- Ewa Grzanka, Sondes Bauer, Artur Lachowski, Szymon Grzanka, Robert Czernecki, Byeongchan So, Tilo Baumbach and Mike Leszczynski
- Academic press:
- Nanomaterials (year: 2024, volume: 15(2), pages: 21), Publisher: MDPI
- Status:
- Published
- DOI:
- 10.3390/nano15020140 – link to the publication
-
Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
- Authors:
- Artur Lachowski, Ewa Grzanka, Robert Czernecki, Mikołaj Grabowski, Szymon Grzanka, Mike Leszczyński, Julita Smalc-Koziorowska
- Academic press:
- Materials Science in Semiconductor Processing (year: 2023, volume: 166, pages: 107752), Publisher: Elesevier
- Status:
- Published
- DOI:
- 10.1016/j.mssp.2023.107752 – link to the publication