Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structures.

2016/22/E/ST7/00526

Keywords:

lateral Schottky barrier diodes 2DEG GaN/AlGaN sub-THz THz photoresponse high frequency properties

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST3_7: Spintronics
  • ST7_2: Electrical engineering: power components and/or systems

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Grzegorz Cywiński 

Number of co-investigators in the project: 7

Call: SONATA BIS 6 - announced on 2016-06-15

Amount awarded: 1 439 600 PLN

Project start date (Y-m-d): 2017-04-04

Project end date (Y-m-d): 2022-04-03

Project duration:: 60 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Przestrajane źródło subterahercowe (170-220 GHz) z wyposażeniem (180 000 PLN)
  2. Szybki miernik pojemności dla DLTS z wyposażeniem (52 000 PLN)
  3. System do mikrofalowego pobudzania struktur testowych (152 000 PLN)

Information in the final report

  • Publication in academic press/journals (10)
  • Articles in post-conference publications (6)
  1. Features of the Formation of Ohmic Contacts to n+-InN
    Authors:
    P.O. Sai, N.V. Safryuk-Romanenko, D.B. But, G. Cywiński, N.S. Boltovets, P.N. Brunkov, N.V. Jmeric, S.V. Ivanov, V.V. Shynkarenko
    Academic press:
    Ukrainian Journal of Physics (rok: 2019, tom: 64, strony: 56-62), Wydawca: Publishing House Naukova Dumka
    Status:
    Published
    DOI:
    10.15407/ujpe64.1.56 - link to the publication
  2. Graphene/AlGaN/GaN RF Switch
    Authors:
    Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev and Grzegorz Cywinski
    Academic press:
    Micromachines (rok: 2021, tom: 12, 11, strony: 45302), Wydawca: MDPIST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND
    Status:
    Published
    DOI:
    10.3390/mi12111343 - link to the publication
  3. Low frequency noise and trap density in GaN/AlGaN field effect transistors
    Authors:
    P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap and S. Rumyantsev
    Academic press:
    Applied Physics Letters (rok: 2019, tom: 115, strony: 183501-1 -183501-5), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.5119227 - link to the publication
  4. Magneto-transport in inverted HgTe quantum wells
    Authors:
    Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wróbel, Grzegorz Cywiński, Sławomir Kret, Tomasz Dietl & Wojciech Knap
    Academic press:
    npj Quantum Materials (rok: 2019, tom: 4, strony: 13 (8pp)), Wydawca: Nature
    Status:
    Published
    DOI:
    10.1038/s41535-019-0154-3 - link to the publication
  5. Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting
    Authors:
    P. Sai, S. O. Potashin, M. Szoła, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, W. Knap, and V. Yu. Kachorovskii
    Academic press:
    Physical Review B (rok: 2021, tom: 104, 4, strony: 045301-1-045301-13), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevB.104.045301 - link to the publication
  6. AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
    Authors:
    P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
    Academic press:
    Semiconductor Science and Technology (rok: 2019, tom: 34, strony: 024002 (6pp)), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/1361-6641/aaf4a7 - link to the publication
  7. An effective method for antenna design in field effect transistor terahertz detectors
    Authors:
    Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czesław, Przybytek Jacek, But Dmytro B., Coquillat Dominnique, Knap Wojciech, Yang Fu-Hua
    Academic press:
    The Journal of Infrared and Millimeter Waves (rok: 2018, tom: 37, strony: 389-392), Wydawca: Shanghai Institute of Technical Physics, Chinese Optical Society
    Status:
    Published
    DOI:
    10.11972/j.issn.1001-9014.2018.04.002 - link to the publication
  8. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
    Authors:
    G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev
    Academic press:
    Applied Physics Letters (rok: 2018, tom: 112, strony: 133502-1 -133502-5), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.5023391 - link to the publication
  9. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
    Authors:
    Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap and Sergey Rumyantsev
    Academic press:
    MDPI Materials (rok: 2020, tom: 13, strony: 4140), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma13184140 - link to the publication
  10. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
    Authors:
    Dub, M.; Sai, P.; Sakowicz, M.; Janicki, L.; But, D.B.; Prystawko, P.; Cywinski, G.; Knap,W.; Rumyantsev, S.
    Academic press:
    Micromachines (rok: 2021, tom: 12, 6, strony: 721), Wydawca: MDPIST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND
    Status:
    Published
    DOI:
    10.3390/mi12060721 - link to the publication
  1. AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime
    Authors:
    M. Sakowicz, P. Sai, D. B. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev and W. Knap
    Conference:
    Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV (rok: 2021, ), Wydawca: SPIE
    Data:
    konferencja 6-10 marzec 2021
    Status:
    Published
  2. Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN
    Authors:
    G. Cywinski, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wiśniewski, B. Stonio, G. S. Simin, S. L. Rumyantsev
    Conference:
    2018 22nd International Microwave and Radar Conference (MIKON) (rok: 2018, ), Wydawca: IEEE Xplore
    Data:
    konferencja 14-17 May 2018
    Status:
    Published
  3. Noise Limitations of GaN Lateral Schottky Diodes for THz Applications
    Authors:
    G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, G. Muzioł, C. Skierbiszewski, A. Khachapuridze, W. Knap, D. But, and S. L. Rumyantsev
    Conference:
    2017 International Conference on Noise and Fluctuations (ICNF) Vilnius (rok: 2017, ), Wydawca: IEEE Xplore
    Data:
    konferencja 20-23 czerwca
    Status:
    Published
  4. THz Imaging and Wireless Communication Using Nanotransistor Based Detectors: From Basic Physics to First Real World Applications
    Authors:
    W. Knap, G. Cywinski, M. Sypek, N. Dyakonova, D. Coquillat, K. Szkudlarek, I. Yahniuk, C. Archier, B. Moulin, M. Triki, M. M. Hella, V. Nodjiadjim, M. Riet, and A. Konczykowska
    Conference:
    ICTON 2017 19th International Conference on Transparent Optical Networks (rok: 2017, ), Wydawca: IEEE Xplore Transparent Optical Networks (ICTON), 2017 19th International Conference on
    Data:
    konferencja 2-6 lipiec
    Status:
    Published
  5. THz photocurrent magneto-oscillations in GaN-based asymmetric grating gate structures
    Authors:
    P. Sai, M. Szoła, S.O. Potashin, D. Yavorskiy, G. Cywiński, P. Prystawko, J. Łusakowski, S. D. Ganichev, S. Rumyantsev, V. Yu. Kachorovskii, W. Knap
    Conference:
    46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (rok: 2021, ), Wydawca: IEEE
    Data:
    konferencja 29 Aug.-3 Sept. 2021
    Status:
    Published
  6. Millimetre band detectors based on GaN/AlGaN HEMT
    Authors:
    Dmytro B. But, Pavel Sai, Ivan Yahniuk, Grzegorz Cywiński, Nina Dyakonova, Wojciech Knap, Zhang Bo-Wen, Yan Wei, Li Zhao- Feng and Yang Fu-Hua
    Conference:
    2018 22nd International Microwave and Radar Conference (MIKON) (rok: 2018, ), Wydawca: IEEE Xplore
    Data:
    konferencja 14-17 May 2018
    Status:
    Published

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