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The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/GaN HEMT transistors

2015/19/D/ST7/02736

Keywords

Descriptors

  • ST7_5: Mikro- i nanoelektronika, optoelektronika
  • ST7_6: Technologie telekomunikacyjne, technologie wysokiej częstotliwości

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Instytut Technologii Elektronowej

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Karolina Pągowska

Number of co-investigators in the project: 4

Call

SONATA 10 – announced on 2015-09-15

Amount awarded
309 700 PLN
Project start date
2016-06-28
Project end date
2019-06-27
Project duration
36 months (the same as in the proposal)
Project status
Project settled

Project description

Download the project description in a pdf file

Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Piec. Cost: 70 000 PLN
  2. Pompa turbomolekularna. Cost: 17 500 PLN
  3. SIMNRA, Oprogramowanie do symulacji widm RBS. Cost: 3 600 PLN
  4. Zestaw komputerowy z oprogramowaniem i akcesoriami. Cost: 5 000 PLN

Information in the final report

Publication in academic press/journals (4)

  1. Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

    Authors:
    K. D. Pągowska,M. Kozubal,A. Taube,M. Guziewicz,K. Gołaszewska-Malec,R. Kruszka,R. Jakieła,A. Piotrowska
    Academic press:
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (year: 2019, volume: 444, pages: 74-79), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.nimb.2019.01.053 – link to the publication

  2. Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method

    Authors:
    Karolina Pągowska, Maciej Kozubal, Andrzej Taube, Artur Trajnerowicz, Renata Kruszka, Krystyna Gołaszewska-Malec, Elżbieta Dynowska, Rafał Jakieła, Adam Barcz
    Academic press:
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (year: 2019, volume: 450, pages: 248-251), Publisher: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.nimb.2018.03.028 – link to the publication

  3. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

    Authors:
    Karolina Pągowska, Maciej Kozubal, Andrzej Taube, Renata Kruszka, Maciej Kamiński, Norbert Kwietniewski, Marcin Juchniewicz, Anna Szerling
    Academic press:
    Materials Science in Semiconductor Processing (year: 2021, volume: 127, pages: 46028), Publisher: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2021.105694 – link to the publication

  4. Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

    Authors:
    Maciej A. Kozubal, Pągowska Karolina , Taube Andrzej , Kruszka Renata , Sankowska Iwona , Kamińska Eliana
    Academic press:
    Materials Science in Semiconductor Processing (year: 2021, volume: 122, pages: 46031), Publisher: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2020.105491 – link to the publication

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Graphic design and implementation: Jakub Piotrowski