Projects funded by the NCN

Information on the principal investigator and host institution

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The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/GaN HEMT transistors

2015/19/D/ST7/02736

Keywords:

AlGaN/GaN HEMT implantation ion isolation defects electric properties

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST7_6: Communication technology, high-frequency technology

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Elektronowej

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Karolina Pągowska 

Number of co-investigators in the project: 4

Call: SONATA 10 - announced on 2015-09-15

Amount awarded: 309 700 PLN

Project start date (Y-m-d): 2016-06-28

Project end date (Y-m-d): 2019-06-27

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Pompa turbomolekularna (17 500 PLN)
  2. SIMNRA, Oprogramowanie do symulacji widm RBS (3 600 PLN)
  3. Zestaw komputerowy z oprogramowaniem i akcesoriami (5 000 PLN)
  4. Piec (70 000 PLN)

Information in the final report

  • Publication in academic press/journals (4)
  1. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures
    Authors:
    Karolina Pągowska, Maciej Kozubal, Andrzej Taube, Renata Kruszka, Maciej Kamiński, Norbert Kwietniewski, Marcin Juchniewicz, Anna Szerling
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2021, tom: 127, strony: 45297), Wydawca: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2021.105694 - link to the publication
  2. Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method
    Authors:
    Karolina Pągowska, Maciej Kozubal, Andrzej Taube, Artur Trajnerowicz, Renata Kruszka, Krystyna Gołaszewska-Malec, Elżbieta Dynowska, Rafał Jakieła, Adam Barcz
    Academic press:
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (rok: 2019, tom: 450, strony: 248-251), Wydawca: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.nimb.2018.03.028 - link to the publication
  3. Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies
    Authors:
    Maciej A. Kozubal, Pągowska Karolina , Taube Andrzej , Kruszka Renata , Sankowska Iwona , Kamińska Eliana
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2021, tom: 122, strony: 45300), Wydawca: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2020.105491 - link to the publication
  4. Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling
    Authors:
    K. D. Pągowska,M. Kozubal,A. Taube,M. Guziewicz,K. Gołaszewska-Malec,R. Kruszka,R. Jakieła,A. Piotrowska
    Academic press:
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (rok: 2019, tom: 444, strony: 74-79), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.nimb.2019.01.053 - link to the publication

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