Projects funded by the NCN

Structural factors (morphology of GaN nano-structure, metallic layer thickness, grain size and distribution, composition...

Call: OPUS 1 , Panel: ST8

Principal investigator: dr hab. Jan Leszek Weyher

Instytut Wysokich Ciśnień PAN

Determination of the physical properties of polar nitrides multiquantum wells (MQWs) Ga-Al-In-N by ab initio modelling

Call: SONATA 2 , Panel: ST3

Principal investigator: dr Paweł Strąk

Instytut Wysokich Ciśnień PAN

Influence of hydrostatic pressure and external electric and magnetic fields on topological insulator state in indium-ric...

Call: OPUS 4 , Panel: ST3

Principal investigator: dr hab. Sławomir Paweł Łepkowski

Instytut Wysokich Ciśnień PAN

Impact toughness and it's anisotropy after severe grain refinement metals processed by hydrostatic extrusion.

Call: PRELUDIUM 6 , Panel: ST8

Principal investigator: Sylwia Przybysz

Instytut Wysokich Ciśnień PAN

Nanoengineering of functionalized Au/GaN surface: Dynamics of labile intermolecular interactions on the interface.

Call: PRELUDIUM 10 , Panel: ST8

Principal investigator: Igor Stanisław Dzięcielewski

Instytut Wysokich Ciśnień PAN

Growth and doping of semiconductors in vapor phase processes - ab initio analysis

Call: OPUS 10 , Panel: ST5

Principal investigator: prof. Stanisław Adam Krukowski

Instytut Wysokich Ciśnień PAN

Interfaces of perovskites, CH3NH3PbI3 and CH3NH3PbBr3, and ZnO doped with B, Al, Ga, In - for photovoltaic applications.

Call: OPUS 12 , Panel: ST8

Principal investigator: dr hab. Małgorzata Wierzbowska

Instytut Wysokich Ciśnień PAN

Critical liquids under pressure: old problems and new challenges

Call: OPUS 13 , Panel: ST3

Principal investigator: dr hab. Sylwester Janusz Rzoska

Instytut Wysokich Ciśnień PAN

Single photon light-emitting diodes based on III-nitrides for quantumtechnologies

Call: OPUS 23 , Panel: ST7

Principal investigator: prof. Czesław Dariusz Skierbiszewski

Instytut Wysokich Ciśnień PAN

Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Call: OPUS 25 , Panel: ST5

Principal investigator: prof. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation

Call: OPUS 26 (LAP) , Panel: ST7

Principal investigator: dr Grzegorz Muzioł

Instytut Wysokich Ciśnień PAN

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

Call: SONATA 16 , Panel: ST5

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień PAN

Nitride-semiconductors laser diodes with polarization doping

Call: OPUS 20 , Panel: ST7

Principal investigator: prof. Piotr Perlin

Instytut Wysokich Ciśnień PAN

The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduc...

Call: SONATA 8 , Panel: ST7

Principal investigator: dr Szymon Grzanka

Instytut Wysokich Ciśnień PAN

Comprehensive study of wurtzite ZnO/MgO superlattices

Call: OPUS 8 , Panel: ST3

Principal investigator: dr hab. Izabela Anna Gorczyca

Instytut Wysokich Ciśnień PAN

From nitride micro-LEDs to single photon emitters. Top-down approach.

Call: OPUS 9 , Panel: ST7

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

The effect of uniaxial pressure on the properties of laser diodes

Call: OPUS 9 , Panel: ST7

Principal investigator: prof. Witold Andrzej Trzeciakowski

Instytut Wysokich Ciśnień PAN

Development of fabrication method of new seamless tubes from bioabsorbable Zn-Mg alloys using hydrostatic extrusion.

Call: OPUS 28 , Panel: ST8

Principal investigator: dr Jacek Skiba

Instytut Wysokich Ciśnień PAN

Determination of the influence of hydrogen on indium incorporation during growth of gain layers by MOVPE method - ab ini...

Call: PRELUDIUM 1 , Panel: ST3

Principal investigator: Paweł Tomasz Kempisty

Instytut Wysokich Ciśnień PAN

Microscopic growth mechanism of InGaN layers and its influence on indium content fluctuations

Call: PRELUDIUM 2 , Panel: ST3

Principal investigator: Henryk Maciej Turski

Instytut Wysokich Ciśnień PAN

Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec...

Call: OPUS 6 , Panel: ST3

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

Ceramic matrix composites reinforced with refractory metals

Call: PRELUDIUM 7 , Panel: ST5

Principal investigator: Aleksandra Elżbieta Kędzierska-Sar

Instytut Wysokich Ciśnień PAN

Research of size control mechanism of ZnO nanoparticles obtained in microwave solvothermal synthesis

Call: PRELUDIUM 10 , Panel: ST5

Principal investigator: Jacek Wojnarowicz

Instytut Wysokich Ciśnień PAN

Identification of physical mechanisms that lead to changes in superconducting properties caused by a high pressure sinte...

Call: SONATA 10 , Panel: ST3

Principal investigator: dr Tomasz Cetner

Instytut Wysokich Ciśnień PAN

Previtrifcation related dynamics in experimental model systems: liquid crystals and plastic crystals

Call: OPUS 11 , Panel: ST3

Principal investigator: dr Aleksandra Drozd-Rzoska

Instytut Wysokich Ciśnień PAN

Terahertz Plasma Wave Instabilities in GaN/AlGaN Nanowires

Call: DAINA 1 , Panel: ST7

Principal investigator: dr Maciej Sakowicz

Instytut Wysokich Ciśnień PAN

Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model.

Call: OPUS 15 , Panel: ST5

Principal investigator: prof. Michał Jerzy Leszczyński

Instytut Wysokich Ciśnień PAN

Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Call: OPUS 15 , Panel: ST5

Principal investigator: dr hab. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Wpływ nanocząstek na dynamikę oraz strukturę fazową ciekłych kryształów poddanych zmianom temperatury i ciśnienia...

Call: ETIUDA 7 , Panel: ST3

Principal investigator: Szymon Starzonek

Instytut Wysokich Ciśnień PAN

Nanoporous GaN - a new platform for realization of quantum structures

Call: SONATA 15 , Panel: ST5

Principal investigator: dr Marta Łucja Sawicka

Instytut Wysokich Ciśnień PAN

Radiative and non-radiative carbon and vacancy-related defects in GaN.

Call: OPUS 19 , Panel: ST5

Principal investigator: dr Piotr Kruszewski

Instytut Wysokich Ciśnień PAN

Point defects in ammonothermal gallium nitride

Call: OPUS 19 , Panel: ST5

Principal investigator: dr Marcin Zając

Instytut Wysokich Ciśnień PAN

Metal vacancies, their complexes and clusters in nitride semiconductors.

Call: WEAVE-UNISONO , Panel: ST5

Principal investigator: dr Robert Filip Czernecki

Instytut Wysokich Ciśnień PAN

Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Call: PRELUDIUM 20 , Panel: ST5

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień PAN

Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications

Call: SONATINA 9 , Panel: ST5

Principal investigator: dr Artur Paweł Lachowski

Instytut Wysokich Ciśnień PAN

Recombination model of highly pumped nitride structures in the presence of waveguide

Call: OPUS 8 , Panel: ST3

Principal investigator: dr hab. Piotr Perlin

Instytut Wysokich Ciśnień PAN

Excitonic design of perovskite LEDs and lasers

Call: OPUS 17 , Panel: ST8

Principal investigator: dr hab. Małgorzata Wierzbowska

Instytut Wysokich Ciśnień PAN

From strained alloys to superlattices - electronic and optical properties of nitride quantum structures

Call: OPUS 1 , Panel: ST3

Principal investigator: dr hab. Izabela Anna Gorczyca

Instytut Wysokich Ciśnień PAN

Monolithic bipolar junction transistor driving LED in group III nitrieds material system

Call: PRELUDIUM 18 , Panel: ST7

Principal investigator: Mikołaj Hieronim Chlipała

Instytut Wysokich Ciśnień PAN