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Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model.

2018/29/B/ST5/00623

Keywords:

X-ray diffraction nitride semiconductors epitaxy

Descriptors:

  • ST3_7: Spintronics
  • ST5_1: Structural properties of materials
  • ST5_19:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Michał Leszczyński 

Number of co-investigators in the project: 7

Call: OPUS 15 - announced on 2018-03-15

Amount awarded: 1 382 000 PLN

Project start date (Y-m-d): 2019-01-09

Project end date (Y-m-d): 2023-12-08

Project duration:: 36 months (the same as in the proposal)

Project status: Project completed

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (4)
  • Book publications / chapters in book publications (1)
  1. Indium Fluctuations Versus Thickness Fluctuations of InGaN Multiple Quantum Wells in X-ray Diffraction
    Authors:
    Oleksii Liubchenko, Marcin Krysko , Ewa Grzanka, Jaroslaw Z. Domagala, Vaclav Holy, Mike Leszczynski
    Academic press:
    Materials (rok: 2024, tom: 1, strony: ), Wydawca: mdpi
    Status:
    Submitted
    DOI:
    brak - link to the publication
  2. Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
    Authors:
    Lachowski, A, Grzanka, E, Czernecki, R, Grabowski, M, Grzanka, Sz,, Leszczynski, M, Smalc-Koziorowska, J
    Academic press:
    Materilas Science in Semiconductor Processing (rok: 2023, tom: 166, strony: 107752), Wydawca: ELSEVIER SCI LTD
    Status:
    Published
    DOI:
    10.1016/j.mssp.2023.107752 - link to the publication
  3. Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers
    Authors:
    Artur Lachowski, Ewa Grzanka, Szymon Grzanka, Robert Czernecki, Mikołaj Grabowski, Roman Hrytsak, Grzegorz Nowak, Mike Leszczyński, Julita Smalc-Koziorowska
    Academic press:
    Journal of Alloys and Compounds (rok: 2022, tom: 900, strony: 163519), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jallcom.2021.163519 - link to the publication
  4. Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers
    Authors:
    Grzegorz Staszczak, Iza Gorczyca, Ewa Grzanka, ,Julita Smalc-Koziorowska, Grzegorz Targowski, Tadeusz Suski
    Academic press:
    Materials (rok: 2023, tom: 16(23), strony: 7386), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma16237386 - link to the publication
  1. GaN-based materials: substrates, Metalorganic Chemical Vapour Phase Epitaxy and quantum well properties
    Authors:
    Ferdinand Scholz, Ewa Grzanka, Michał Bockowski
    Book:
    Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (rok: 2020, tom: 1, strony: 41-98), Wydawca: Wiley-VCH Publisher
    Status:
    Published

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