Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model.
2018/29/B/ST5/00623
Keywords
Descriptors
- ST3_7: Półprzewodniki
- ST5_1: Właściwości strukturalne materiałów
- ST5_19: Metody badań właściwości materiałów
Panel
ST5 – Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution
Instytut Wysokich Ciśnień PAN
Voivodeship: mazowieckie
Principal investigator (from the host institution)
prof. Michał Jerzy Leszczyński
Number of co-investigators in the project: 7
Call
OPUS 15 – announced on 2018-03-15
- Amount awarded
- 1 382 000 PLN
- Project start date
- 2019-01-09
- Project end date
- 2023-12-08
- Project duration
- 59 months (the same as in the proposal)
- Project status
- Project settled
Project description
Download the project description in a pdf file
Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
Publication in academic press/journals (3)
-
Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers
- Authors:
- Grzegorz Staszczak, Iza Gorczyca, Ewa Grzanka, ,Julita Smalc-Koziorowska, Grzegorz Targowski, Tadeusz Suski
- Academic press:
- Materials (year: 2023, volume: 16(23), pages: 7386), Publisher: MDPI
- Status:
- Published
- DOI:
- 10.3390/ma16237386 – link to the publication
-
Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers
- Authors:
- Artur Lachowski, Ewa Grzanka, Szymon Grzanka, Robert Czernecki, Mikołaj Grabowski, Roman Hrytsak, Grzegorz Nowak, Mike Leszczyński, Julita Smalc-Koziorowska
- Academic press:
- Journal of Alloys and Compounds (year: 2022, volume: 900, pages: 163519), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.jallcom.2021.163519 – link to the publication
-
Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
- Authors:
- Lachowski, A, Grzanka, E, Czernecki, R, Grabowski, M, Grzanka, Sz,, Leszczynski, M, Smalc-Koziorowska, J
- Academic press:
- Materilas Science in Semiconductor Processing (year: 2023, volume: 166, pages: 107752), Publisher: ELSEVIER SCI LTD
- Status:
- Published
- DOI:
- 10.1016/j.mssp.2023.107752 – link to the publication
Book publications / chapters in book publications (1)
-
GaN-based materials: substrates, Metalorganic Chemical Vapour Phase Epitaxy and quantum well properties
- Authors:
- Ferdinand Scholz, Ewa Grzanka, Michał Bockowski
- Book:
- Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (year: 2020, volume: 1, pages: 41-98), Publisher: Wiley-VCH Publisher
- Status:
- Published