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Information on the principal investigator and host institution

Information of the project and the call

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Microscopic growth mechanism of InGaN layers and its influence on indium content fluctuations

2011/03/N/ST3/02938

Keywords:

InGaN AFM PL nitrides indium content fluctuations MBE

Descriptors:

  • ST3_7: Spintronics
  • ST5_4: Thin films
  • ST5_1: Structural properties of materials

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

Henryk Turski 

Number of co-investigators in the project: 3

Call: PRELUDIUM 2 - announced on 2011-09-15

Amount awarded: 395 670 PLN

Project start date (Y-m-d): 2012-08-14

Project end date (Y-m-d): 2014-11-13

Project duration:: 27 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. pompa kriogeniczna CT10 (190 000 PLN)

Information in the final report

  • Publication in academic press/journals (4)
  • Articles in post-conference publications (2)
  1. Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
    Authors:
    Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig R. Wasilewski, Sylwester Porowski and Czeslaw Skierbiszewski
    Academic press:
    Japanese Journal of Applied Physics (rok: 2014, tom: 52, strony: 08JE02), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/JJAP.52.08JE02 - link to the publication
  2. Cyan laser diode grown by plasma-assisted molecular beam epitaxy
    Authors:
    H. Turski, G. Muziol, P. Wolny, S. Grzanka, G. Cywinski, M. Sawicka, P. Perlin, C. Skierbiszewski
    Academic press:
    APPLIED PHYSICS LETTERS (rok: 2014, tom: 104, strony: 23503), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4861655 - link to the publication
  3. Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
    Authors:
    H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2013, tom: 367, strony: 115-121), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2012.12.026 - link to the publication
  4. Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes
    Authors:
    M. Baranowski, R. Kudrawiec, J. Misiewicz, H. Turski, and C. Skierbiszewski
    Academic press:
    Physica Status Solidi B (rok: 2015, tom: 5, strony: 983-988), Wydawca: Wiley Online Library
    Status:
    Published
    DOI:
    10.1002/pssb.201451588 - link to the publication
  1. Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy
    Authors:
    Henryk Turski ; Marcin Siekacz ; Marta Sawiska ; Zbig R. Wasilewski ; Sylwester Porowski ; Czesław Skierbiszewski
    Conference:
    Photonics West 2013 (rok: 2013, ), Wydawca: SPIE
    Data:
    konferencja 02.02.2013
    Status:
    Published
  2. True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates
    Authors:
    Henryk Turski ; Marcin Siekacz ; Grzegorz Muzioł ; Marta Sawicka ; Szymon Grzanka ; Piotr Perlin ; Tadeusz Suski ; Zbig R. Wasilewski ; Izabella Grzegory ; Sylwester Porowski ; Czeslaw Skierbiszewski
    Conference:
    Photonics West 2013 (rok: 2013, ), Wydawca: SPIE
    Data:
    konferencja 02.02.2013
    Status:
    Published

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