Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Determination of the influence of hydrogen on indium incorporation during growth of gain layers by MOVPE method - ab initio modelling

2011/01/N/ST3/04382

Keywords:

ab initio DFT III-V semiconductors InGaN

Descriptors:

  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

Paweł Kempisty 

Number of co-investigators in the project: 4

Call: PRELUDIUM 1 - announced on 2011-03-15

Amount awarded: 228 800 PLN

Project start date (Y-m-d): 2011-12-01

Project end date (Y-m-d): 2014-05-31

Project duration:: 30 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Komputer stacjonarny (5 000 PLN)

Information in the final report

  • Publication in academic press/journals (9)
  1. Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
    Authors:
    Paweł Kempisty, Paweł Strąk, Konrad Sakowski, Stanisław Krukowski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 401, strony: 514-517), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.061 - link to the publication
  2. Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position
    Authors:
    Paweł Kempisty, Paweł Strąk, Konrad Sakowski, Stanisław Krukowski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 401, strony: 78-81), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.055 - link to the publication
  3. General aspects of the vapor growth of semiconductor crystals - A study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
    Authors:
    Paweł Kempisty, Paweł Strak, Konrad Sakowski, Stanisław Krukowski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 390, strony: 71-79), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2013.12.039 - link to the publication
  4. Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
    Authors:
    Paweł Kempisty and Stanisław Krukowski
    Academic press:
    AIP Advances (rok: 2014, tom: 4, strony: 117109), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4901922 - link to the publication
  5. Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
    Authors:
    Stanisław Krukowski, Paweł Kempisty, Paweł Strąk
    Academic press:
    Journal of Applied Physics (rok: 2013, tom: 114, strony: 143705), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4824800 - link to the publication
  6. Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
    Authors:
    Stanisław Krukowski, Paweł Kempisty, Paweł Strąk, Konrad Sakowski
    Academic press:
    Journal of Applied Physics (rok: 2014, tom: 115, strony: 43529), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4863338 - link to the publication
  7. Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
    Authors:
    Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka, Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska, Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadeusz Suski, Piotr Perlin, Mike Leszczynski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 402, strony: 330-336), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2014.05.027 - link to the publication
  8. Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
    Authors:
    Stanisław Krukowski, Paweł Kempisty, Paweł Strąk
    Academic press:
    Journal of Applied Physics (rok: 2013, tom: 114, strony: 63507), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4817903 - link to the publication
  9. DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
    Authors:
    Paweł Kempisty, Paweł Strąk, Konrad Sakowski, Stanisław Krukowski
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 403, strony: 105-109), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2014.06.016 - link to the publication

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy