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Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Influence of hydrostatic pressure and external electric and magnetic fields on topological insulator state in indium-rich InGaN/GaN quantum wells.

2012/07/B/ST3/03174

Keywords:

topological insulator nitride semiconductors quantum wells hydrostatic pressure electric and magnetic fields

Descriptors:

  • ST3_7: Spintronics
  • ST3_5: Physical properties of semiconductors and insulators
  • ST3_12: Molecular electronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Sławomir Łepkowski 

Number of co-investigators in the project: 4

Call: OPUS 4 - announced on 2012-09-15

Amount awarded: 282 600 PLN

Project start date (Y-m-d): 2013-06-25

Project end date (Y-m-d): 2016-10-24

Project duration:: 40 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Stacjonarny komputer osobisty (20 000 PLN)

Information in the final report

  • Publication in academic press/journals (5)
  1. Magnetoconductance in InN/GaN quantum wells in topological insulator phase
    Authors:
    W. Bardyszewski, D. Rodak, S. P. Łepkowski
    Academic press:
    Europhysics Letters (rok: 2017, tom: 118, strony: 27001), Wydawca: European Physical Society
    Status:
    Published
    DOI:
    10.1209/0295-5075/118/27001 - link to the publication
  2. Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
    Authors:
    S.P. Łepkowski, W. Bardyszewski, D. Rodak
    Academic press:
    Acta Physica Polonica A (rok: 2014, tom: 126, strony: 1154-1155), Wydawca: Polich Academy of Sciences, Institute of Physics
    Status:
    Published
    DOI:
    10.12693/APhysPolA.126.1154 - link to the publication
  3. Nonlinear Zeeman splitting of magnetoexcitons in c-plane wurtzite GaN-based quantum wells
    Authors:
    W. Bardyszewski, S.P. Łepkowski
    Academic press:
    Physical Review B (rok: 2014, tom: 90, strony: od 075302-1 do 075302-6), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevB.90.075302 - link to the publication
  4. Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells
    Authors:
    S. P. Łepkowski, W. Bardyszewski
    Academic press:
    Journal of Physics: Condensed Matter (rok: 2017, tom: 29, strony: 195702), Wydawca: Institute of Physics
    Status:
    Published
    DOI:
    10.1088/1361-648X/aa6860 - link to the publication
  5. Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure
    Authors:
    S. P. Łepkowski, W. Bardyszewski
    Academic press:
    Journal of Physics: Condensed Matter (rok: 2017, tom: 29, strony: 55702), Wydawca: Institute of Physics
    Status:
    Published
    DOI:
    10.1088/1361-648X/29/5/055702 - link to the publication

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