Projects funded by the NCN


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39 projects found matching your search criteria :

  1. From nitride micro-LEDs to single photon emitters. Top-down approach.

    Call: OPUS 9 , Panel: ST7

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  2. The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduc...

    Call: SONATA 8 , Panel: ST7

    Principal investigator: dr Szymon Grzanka

    Instytut Wysokich Ciśnień PAN

  3. Optical and electronic properties of ternary and quaternary dilute III-V bismides and nitrides semiconductors, having th...

    Call: SONATA 7 , Panel: ST3

    Principal investigator: dr Wojciech Linhart

    Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

  4. Modelling of nitride-based vertical-cavity surface-emitting lasers

    Call: OPUS 7 , Panel: ST7

    Principal investigator: dr hab. Robert Sarzała

    Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

  5. Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec...

    Call: OPUS 6 , Panel: ST3

    Principal investigator: prof. Tadeusz Suski

    Instytut Wysokich Ciśnień PAN

  6. Terahertz plasma instabilities in nitrides nanostructures

    Call: HARMONIA 5 , Panel: ST3

    Principal investigator: prof. Czesław Skierbiszewski

    Instytut Wysokich Ciśnień PAN

  7. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing ...

    Call: OPUS 5 , Panel: ST5

    Principal investigator: prof. Jerzy Janik

    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

  8. From strained alloys to superlattices - electronic and optical properties of nitride quantum structures

    Call: OPUS 1 , Panel: ST3

    Principal investigator: dr hab. Izabela Gorczyca

    Instytut Wysokich Ciśnień PAN

  9. Influence of hydrostatic pressure and external electric and magnetic fields on topological insulator state in indium-ric...

    Call: OPUS 4 , Panel: ST3

    Principal investigator: dr hab. Sławomir Łepkowski

    Instytut Wysokich Ciśnień PAN

  10. Spin dynamics and electron spin filtering effect in III-V dilute nitrides semiconductors

    Call: PRELUDIUM 4 , Panel: ST3

    Principal investigator: dr Michał Baranowski

    Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

  11. The effect of distribution of internal electric fields on the optical properties of low-dimensional structures of nitrid...

    Call: OPUS 3 , Panel: ST3

    Principal investigator: dr hab. Agata Kamińska

    Instytut Fizyki PAN

  12. Influence of the direction of crystallization front on the mechanisms of formation of magnesium impurity centers in gall...

    Call: PRELUDIUM 3 , Panel: ST3

    Principal investigator: Bogdan Sadovyi

    Instytut Wysokich Ciśnień PAN

  13. Determination of the physical properties of polar nitrides multiquantum wells (MQWs) Ga-Al-In-N by ab initio modelling

    Call: SONATA 2 , Panel: ST3

    Principal investigator: dr Paweł Strąk

    Instytut Wysokich Ciśnień PAN

  14. Gallium nitride doped with beryllium -towards a new generation of light converters.

    Call: OPUS 2 , Panel: ST3

    Principal investigator: dr hab. Henryk Teisseyre

    INSTYTUT FIZYKI PAN

  15. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

    Call: OPUS 25 , Panel: ST5

    Principal investigator: prof. Michał Boćkowski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  16. Mechanisms of Al, Ga, In diffusion in three-dimensional quantum structures of (AlGaIn)N

    Call: OPUS 24 , Panel: ST5

    Principal investigator: prof. Michał Leszczyński

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  17. Supersymmetric nitride-based semiconductor lasers

    Call: OPUS 24 (LAP) , Panel: ST7

    Principal investigator: prof. Tomasz Czyszanowski

    Politechnika Łódzka

  18. Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

    Call: PRELUDIUM 21 , Panel: ST5

    Principal investigator: Wojciech Olszewski

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  19. Physics of GaN/AlGaN nanowire surfaces – towards more efficient nano-LEDs

    Call: OPUS 23 , Panel: ST5

    Principal investigator: prof. Bogdan Kowalski

    Instytut Fizyki Polskiej Akademii Nauk

  20. Ab initio thermodynamics and engineering of point defects in nanometric near-surface areas of III-nitride semiconductors...

    Call: OPUS 21 , Panel: ST5

    Principal investigator: dr Paweł Kempisty

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  21. Hexagonal boron nitride for optoelectrics in the DUV range: contacts and conductivity

    Call: PRELUDIUM 20 , Panel: ST7

    Principal investigator: Jakub Rogoża

    Uniwersytet Warszawski, Wydział Fizyki

  22. Metal vacancies, their complexes and clusters in nitride semiconductors.

    Call: WEAVE-UNISONO , Panel: ST5

    Principal investigator: dr Robert Filip Czernecki

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  23. Nitride-semiconductors laser diodes with polarization doping

    Call: OPUS 20 , Panel: ST7

    Principal investigator: prof. Piotr Perlin

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  24. Point defects in ammonothermal gallium nitride

    Call: OPUS 19 , Panel: ST5

    Principal investigator: dr Marcin Zając

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  25. Nanoporous GaN - a new platform for realization of quantum structures

    Call: SONATA 15 , Panel: ST5

    Principal investigator: dr Marta Sawicka

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  26. Monolithic bipolar junction transistor driving LED in group III nitrieds material system

    Call: PRELUDIUM 18 , Panel: ST7

    Principal investigator: Mikołaj Chlipała

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  27. Quantum behavior of point defects and their complexes in III-V nitrides for nanophotonics and quantum information proces...

    Call: SONATINA 3 , Panel: ST3

    Principal investigator: dr Kamil Czelej

    Uniwersytet Warszawski, Wydział Fizyki

  28. Monolithic superconductor-semiconductor integration using nitride platform

    Call: OPUS 16 , Panel: ST5

    Principal investigator: prof. Czesław Skierbiszewski

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  29. Nitride VCSEL as signal sources in VLC systems

    Call: PRELUDIUM 15 , Panel: ST7

    Principal investigator: Patrycja Śpiewak

    Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

  30. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

    Call: OPUS 1 , Panel: ST5

    Principal investigator: prof. Jerzy Janik

    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

  31. Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model.

    Call: OPUS 15 , Panel: ST5

    Principal investigator: prof. Michał Leszczyński

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  32. Lattice dynamics and thermodynamic stability of nitride semiconductors surfaces based on ab initio methods.

    Call: OPUS 14 , Panel: ST3

    Principal investigator: dr Paweł Kempisty

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk

  33. Electronic Structure of Rare Earth Doped Group III Nitride Semiconductors

    Call: SONATA 13 , Panel: ST3

    Principal investigator: dr Maciej Winiarski

    Instytut Niskich Temperatur i Badań Strukturalnych im. Włodzimierza Trzebiatowskiego Polskiej Akademii Nauk

  34. Stability, ordering, phase diagrams and electronic structures of carbon-boron-nitride 2D hexagonal alloys

    Call: PRELUDIUM 13 , Panel: ST3

    Principal investigator: Agnieszka Jamróz

    Uniwersytet Warszawski, Wydział Fizyki

  35. MBE growth and submicron imaging of local electronic and optical processes in nitride semiconductor nanostructures

    Call: OPUS 11 , Panel: ST5

    Principal investigator: prof. Bogdan Kowalski

    Instytut Fizyki Polskiej Akademii Nauk

  36. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

    Call: PRELUDIUM 1 , Panel: ST3

    Principal investigator: Paulina Kamyczek

    Politechnika Wrocławska

  37. Nitride based green laser diodes

    Call: SONATA 10 , Panel: ST7

    Principal investigator: dr Maciej Kuc

    Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

  38. New method of fabrication of InGaN/GaN quantum wires

    Call: OPUS 9 , Panel: ST5

    Principal investigator: prof. Michał Leszczyński

    Instytut Wysokich Ciśnień PAN

  39. Modulation spectroscopy of novel nitride semiconductor structures in ultraviolet spectral range

    Call: SONATA 9 , Panel: ST7

    Principal investigator: dr Magdalena Latkowska-Baranowska

    Politechnika Wrocławska